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Title: Effects of hydrogen on acceptor activation in ternary nitride semiconductors

Abstract

Doping control is necessary to unlock the scientific and technological potential of many materials, including ternary II-IV-nitride semiconductors, which are closely related to binary GaN. In particular, ZnSnN 2 has been reported to have degenerate doping density, despite bandgap energies that are well suited for solar energy conversion. Here, we show that annealing Zn-rich Zn 1+xSn 1-xN 2 grown with added hydrogen reduces its free electron density by orders of magnitude, down to 4 x 10 16 cm -3. This experimental observation can be explained by hydrogen passivation of acceptors in Zn 1+xSn 1-xN 2 during growth, lowering the driving force for unintentional donor formation. Lastly, these results indicate that the doping control principles used in GaN can be translated to ZnSnN 2, suggesting that other strategies used in binary III-Vs can be applied to accelerate the technological development of ternary II-IV-N 2 materials.

Authors:
 [1];  [1];  [2];  [3];  [1];  [1];  [2]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Colorado School of Mines, Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1347202
Alternate Identifier(s):
OSTI ID: 1401270
Report Number(s):
NREL/JA-5K00-67268
Journal ID: ISSN 2199-160X
Grant/Contract Number:
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 3; Journal ID: ISSN 2199-160X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; annealing; hydrogen; nitride; photovoltaics; semiconductor

Citation Formats

Fioretti, Angela N., Stokes, Adam, Young, Matthew R., Gorman, Brian, Toberer, Eric S., Tamboli, Adele C., and Zakutayev, Andriy. Effects of hydrogen on acceptor activation in ternary nitride semiconductors. United States: N. p., 2017. Web. doi:10.1002/aelm.201600544.
Fioretti, Angela N., Stokes, Adam, Young, Matthew R., Gorman, Brian, Toberer, Eric S., Tamboli, Adele C., & Zakutayev, Andriy. Effects of hydrogen on acceptor activation in ternary nitride semiconductors. United States. doi:10.1002/aelm.201600544.
Fioretti, Angela N., Stokes, Adam, Young, Matthew R., Gorman, Brian, Toberer, Eric S., Tamboli, Adele C., and Zakutayev, Andriy. Thu . "Effects of hydrogen on acceptor activation in ternary nitride semiconductors". United States. doi:10.1002/aelm.201600544. https://www.osti.gov/servlets/purl/1347202.
@article{osti_1347202,
title = {Effects of hydrogen on acceptor activation in ternary nitride semiconductors},
author = {Fioretti, Angela N. and Stokes, Adam and Young, Matthew R. and Gorman, Brian and Toberer, Eric S. and Tamboli, Adele C. and Zakutayev, Andriy},
abstractNote = {Doping control is necessary to unlock the scientific and technological potential of many materials, including ternary II-IV-nitride semiconductors, which are closely related to binary GaN. In particular, ZnSnN2 has been reported to have degenerate doping density, despite bandgap energies that are well suited for solar energy conversion. Here, we show that annealing Zn-rich Zn1+xSn1-xN2 grown with added hydrogen reduces its free electron density by orders of magnitude, down to 4 x 1016 cm-3. This experimental observation can be explained by hydrogen passivation of acceptors in Zn1+xSn1-xN2 during growth, lowering the driving force for unintentional donor formation. Lastly, these results indicate that the doping control principles used in GaN can be translated to ZnSnN2, suggesting that other strategies used in binary III-Vs can be applied to accelerate the technological development of ternary II-IV-N2 materials.},
doi = {10.1002/aelm.201600544},
journal = {Advanced Electronic Materials},
number = 3,
volume = 3,
place = {United States},
year = {Thu Feb 09 00:00:00 EST 2017},
month = {Thu Feb 09 00:00:00 EST 2017}
}

Journal Article:
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Cited by: 8works
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  • Cited by 8
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