skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Synthesis and Systematic Trends in Structure and Electrical Properties of [(SnSe) 1.15 ] m (VSe 2 ) 1 , m = 1, 2, 3, and 4

Abstract

Four compounds [(SnSe)1.15]m(VSe2)1, where m = 1–4, were synthesized to explore the effect of increasing the distance between Se–V–Se dichalcogenide layers on electrical transport properties. These kinetically stable compounds were prepared using designed precursors that contained a repeating pattern of elemental layers with the nanoarchitecture of the desired product. XRD and STEM data revealed that the precursors self-assembled into the desired compounds containing a Se–V–Se dichalcogenide layer precisely separated by a SnSe layer. The 00l diffraction data are used to determine the position of the Sn, Se, and V planes along the c-axis, confirming that the average structure is similar to that observed in the STEM images, and the resulting data agrees well with results obtained from calculations based on density functional theory and a semiempirical description of van der Waals interactions. The in-plane diffraction data contains reflections that can be indexed as hk0 reflections coming from the two independent constituents. The SnSe layers diffract independently from one another and are distorted from the bulk structure to lower the surface free energy. All of the samples showed metallic-like behavior in temperature-dependent resistivity between room temperature and about 150 K. The electrical resistivity systematically increases as m increases. Below 150 Kmore » the transport data strongly indicates a charge density wave transition whose onset temperature systematically increases as m increases. This suggests increasing quasi-two-dimensional behavior as increasingly thick layers of SnSe separate the Se–V–Se layers. This is supported by electronic structure calculations.« less

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
USDOE; National Science Foundation (NSF)
OSTI Identifier:
1347030
Resource Type:
Journal Article
Journal Name:
Chemistry of Materials
Additional Journal Information:
Journal Volume: 26; Journal Issue: 9; Journal ID: ISSN 0897-4756
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
ENGLISH
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Atkins, Ryan, Dolgos, Michelle, Fiedler, Andreas, Grosse, Corinna, Fischer, Saskia F., Rudin, Sven P., and Johnson, David C.. Synthesis and Systematic Trends in Structure and Electrical Properties of [(SnSe) 1.15 ] m (VSe 2 ) 1 , m = 1, 2, 3, and 4. United States: N. p., 2014. Web. doi:10.1021/cm5004774.
Atkins, Ryan, Dolgos, Michelle, Fiedler, Andreas, Grosse, Corinna, Fischer, Saskia F., Rudin, Sven P., & Johnson, David C.. Synthesis and Systematic Trends in Structure and Electrical Properties of [(SnSe) 1.15 ] m (VSe 2 ) 1 , m = 1, 2, 3, and 4. United States. https://doi.org/10.1021/cm5004774
Atkins, Ryan, Dolgos, Michelle, Fiedler, Andreas, Grosse, Corinna, Fischer, Saskia F., Rudin, Sven P., and Johnson, David C.. Tue . "Synthesis and Systematic Trends in Structure and Electrical Properties of [(SnSe) 1.15 ] m (VSe 2 ) 1 , m = 1, 2, 3, and 4". United States. https://doi.org/10.1021/cm5004774.
@article{osti_1347030,
title = {Synthesis and Systematic Trends in Structure and Electrical Properties of [(SnSe) 1.15 ] m (VSe 2 ) 1 , m = 1, 2, 3, and 4},
author = {Atkins, Ryan and Dolgos, Michelle and Fiedler, Andreas and Grosse, Corinna and Fischer, Saskia F. and Rudin, Sven P. and Johnson, David C.},
abstractNote = {Four compounds [(SnSe)1.15]m(VSe2)1, where m = 1–4, were synthesized to explore the effect of increasing the distance between Se–V–Se dichalcogenide layers on electrical transport properties. These kinetically stable compounds were prepared using designed precursors that contained a repeating pattern of elemental layers with the nanoarchitecture of the desired product. XRD and STEM data revealed that the precursors self-assembled into the desired compounds containing a Se–V–Se dichalcogenide layer precisely separated by a SnSe layer. The 00l diffraction data are used to determine the position of the Sn, Se, and V planes along the c-axis, confirming that the average structure is similar to that observed in the STEM images, and the resulting data agrees well with results obtained from calculations based on density functional theory and a semiempirical description of van der Waals interactions. The in-plane diffraction data contains reflections that can be indexed as hk0 reflections coming from the two independent constituents. The SnSe layers diffract independently from one another and are distorted from the bulk structure to lower the surface free energy. All of the samples showed metallic-like behavior in temperature-dependent resistivity between room temperature and about 150 K. The electrical resistivity systematically increases as m increases. Below 150 K the transport data strongly indicates a charge density wave transition whose onset temperature systematically increases as m increases. This suggests increasing quasi-two-dimensional behavior as increasingly thick layers of SnSe separate the Se–V–Se layers. This is supported by electronic structure calculations.},
doi = {10.1021/cm5004774},
url = {https://www.osti.gov/biblio/1347030}, journal = {Chemistry of Materials},
issn = {0897-4756},
number = 9,
volume = 26,
place = {United States},
year = {2014},
month = {5}
}