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Title: Tuneable photonic device including an array of metamaterial resonators

Abstract

A photonic apparatus includes a metamaterial resonator array overlying and electromagnetically coupled to a vertically stacked plurality of quantum wells defined in a semiconductor body. An arrangement of electrical contact layers is provided for facilitating the application of a bias voltage across the quantum well stack. Those portions of the semiconductor body that lie between the electrical contact layers are conformed to provide an electrically conductive path between the contact layers and through the quantum well stack.

Inventors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1346953
Patent Number(s):
9,594,266
Application Number:
14/183,261
Assignee:
Sandia Corporation SNL-A
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Feb 18
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION

Citation Formats

Brener, Igal, Wanke, Michael, and Benz, Alexander. Tuneable photonic device including an array of metamaterial resonators. United States: N. p., 2017. Web.
Brener, Igal, Wanke, Michael, & Benz, Alexander. Tuneable photonic device including an array of metamaterial resonators. United States.
Brener, Igal, Wanke, Michael, and Benz, Alexander. Tue . "Tuneable photonic device including an array of metamaterial resonators". United States. doi:. https://www.osti.gov/servlets/purl/1346953.
@article{osti_1346953,
title = {Tuneable photonic device including an array of metamaterial resonators},
author = {Brener, Igal and Wanke, Michael and Benz, Alexander},
abstractNote = {A photonic apparatus includes a metamaterial resonator array overlying and electromagnetically coupled to a vertically stacked plurality of quantum wells defined in a semiconductor body. An arrangement of electrical contact layers is provided for facilitating the application of a bias voltage across the quantum well stack. Those portions of the semiconductor body that lie between the electrical contact layers are conformed to provide an electrically conductive path between the contact layers and through the quantum well stack.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 14 00:00:00 EDT 2017},
month = {Tue Mar 14 00:00:00 EDT 2017}
}

Patent:

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