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Title: Vertical III-nitride thin-film power diode

Abstract

A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

Inventors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1346948
Patent Number(s):
9,595,616
Application Number:
14/957,012
Assignee:
Sandia Corporation SNL-A
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Dec 02
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wierer, Jr., Jonathan, Fischer, Arthur J., and Allerman, Andrew A.. Vertical III-nitride thin-film power diode. United States: N. p., 2017. Web.
Wierer, Jr., Jonathan, Fischer, Arthur J., & Allerman, Andrew A.. Vertical III-nitride thin-film power diode. United States.
Wierer, Jr., Jonathan, Fischer, Arthur J., and Allerman, Andrew A.. Tue . "Vertical III-nitride thin-film power diode". United States. doi:. https://www.osti.gov/servlets/purl/1346948.
@article{osti_1346948,
title = {Vertical III-nitride thin-film power diode},
author = {Wierer, Jr., Jonathan and Fischer, Arthur J. and Allerman, Andrew A.},
abstractNote = {A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 14 00:00:00 EDT 2017},
month = {Tue Mar 14 00:00:00 EDT 2017}
}

Patent:

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