Valley splitting of single-electron Si MOS quantum dots

Gamble, John King; Harvey-Collard, Patrick; Jacobson, N. Tobias; Baczewski, Andrew D.; Nielsen, Erik; Maurer, Leon; Montano, Ines; Rudolph, Martin; Carroll, M. S.; Yang, C. H.; Rossi, A.; Dzurak, A. S.; Muller, Richard P.

doi:10.1063/1.4972514

Valley splitting of single-electron Si MOS quantum dots

Journal Article · 19 December 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4972514· OSTI ID:1346544

Gamble, John King ^[1]; Harvey-Collard, Patrick ^[2]; Jacobson, N. Tobias ^[1]; Baczewski, Andrew D. ^[1]; Nielsen, Erik ^[1]; ^[1]; Montano, Ines ^[1]; Rudolph, Martin ^[1]; Carroll, M. S. ^[1]; Yang, C. H. ^[3]; Rossi, A. ^[4]; Dzurak, A. S. ^[3]; ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. de Sherbrooke, Sherbrooke, QC (Canada); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
The Univ. of New South Wales, Sydney (Australia)
Univ. of Cambridge, Cambridge (United Kingdom)

Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from an experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both this and a recently reported experiment. Through sampling millions of realistic cases of interface roughness, our method provides evidence that the valley physics between the two samples is essentially the same.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1346544

Alternate ID(s):: OSTI ID: 1421186

Report Number(s):: SAND-2016-10270J; APPLAB; 648248; TRN: US1701126

Journal Information:: Applied Physics Letters, Vol. 109, Issue 25; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 41 works

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Few-electrode design for silicon MOS quantum dots Ramirez, Eduardo B.; Sfigakis, Francois; Kudva, Sukanya arXiv https://doi.org/10.48550/arxiv.1812.09643	text	January 2018
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