The effect of Mo doping on the charge separation dynamics and photocurrent performance of BiVO 4 photoanodes
Abstract
Doping with electron-rich elements in BiVO4 photoanodes has been demonstrated as a desirable approach for improving their carrier mobility and charge separation efficiency. However, the effect of doping and dopant concentration on the carrier dynamics and photoelectrochemical performance remains unclear. In this work, we examined the effects of Mo doping on the charge separation dynamics and photocurrent performance in BiVO4 photoanodes. We show that the photocurrent of BiVO4 photoanodes increases with increasing concentration of the Mo dopant, which can be attributed to both the improved carrier mobility resulting from increased electron density and charge separation efficiency due to the diminishing of trap states upon Mo doping. The effect of doping on the electronic structure, carrier dynamics and photocurrent performance of BiVO4 photoanodes resulting from W and Mo dopants was also compared and discussed in this study. The knowledge gained from this work will provide important insights into the optimization of the carrier mobility and charge separation efficiency of BiVO4 photoanodes by controlling the dopants and their concentrations.
- Authors:
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1346229
- Resource Type:
- Journal Article
- Journal Name:
- Physical Chemistry Chemical Physics. PCCP (Print)
- Additional Journal Information:
- Journal Volume: 18; Journal Issue: 48; Journal ID: ISSN 1463-9076
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- ENGLISH
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Pattengale, Brian, and Huang, Jier. The effect of Mo doping on the charge separation dynamics and photocurrent performance of BiVO 4 photoanodes. United States: N. p., 2016.
Web. doi:10.1039/C6CP06407H.
Pattengale, Brian, & Huang, Jier. The effect of Mo doping on the charge separation dynamics and photocurrent performance of BiVO 4 photoanodes. United States. https://doi.org/10.1039/C6CP06407H
Pattengale, Brian, and Huang, Jier. 2016.
"The effect of Mo doping on the charge separation dynamics and photocurrent performance of BiVO 4 photoanodes". United States. https://doi.org/10.1039/C6CP06407H.
@article{osti_1346229,
title = {The effect of Mo doping on the charge separation dynamics and photocurrent performance of BiVO 4 photoanodes},
author = {Pattengale, Brian and Huang, Jier},
abstractNote = {Doping with electron-rich elements in BiVO4 photoanodes has been demonstrated as a desirable approach for improving their carrier mobility and charge separation efficiency. However, the effect of doping and dopant concentration on the carrier dynamics and photoelectrochemical performance remains unclear. In this work, we examined the effects of Mo doping on the charge separation dynamics and photocurrent performance in BiVO4 photoanodes. We show that the photocurrent of BiVO4 photoanodes increases with increasing concentration of the Mo dopant, which can be attributed to both the improved carrier mobility resulting from increased electron density and charge separation efficiency due to the diminishing of trap states upon Mo doping. The effect of doping on the electronic structure, carrier dynamics and photocurrent performance of BiVO4 photoanodes resulting from W and Mo dopants was also compared and discussed in this study. The knowledge gained from this work will provide important insights into the optimization of the carrier mobility and charge separation efficiency of BiVO4 photoanodes by controlling the dopants and their concentrations.},
doi = {10.1039/C6CP06407H},
url = {https://www.osti.gov/biblio/1346229},
journal = {Physical Chemistry Chemical Physics. PCCP (Print)},
issn = {1463-9076},
number = 48,
volume = 18,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 2016},
month = {Fri Jan 01 00:00:00 EST 2016}
}