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Title: Final Technical Report

Abstract

Our BES supported program integrates molecular beam epitaxy growth with in situ atomic scale imaging using scanning tunneling microscopy/spectroscopy and atomic force microscopy. Aided by density functional theory calculations, we explore enhanced functionalities emerging from the interplay of strain, proximity, and spin-orbit interactions in heterostructures of wide band gap semiconductors, graphene, and Dirac materials, focusing on three thrusts: 1) doping wide bandgap semiconductors and graphene; 2) graphene nanoribbons and graphene-semiconductor heterostructures; and 3) Dirac materials. Our findings and discoveries have led to the publication of one book chapter and twenty-three refereed journal articles, including several in high impact journals such as Nature Communications, Physical Review Letters, and Nano Letters. Highlights of each thrust are provided in the report.

Authors:
 [1]
  1. West Virginia Univ., Morgantown, WV (United States)
Publication Date:
Research Org.:
University of Wisconsin, Milwaukee
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1346183
Report Number(s):
DOE-UWM-ER46228
DOE Contract Number:  
FG02-05ER46228
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; STM; graphene; Dirac materials; density functional theory

Citation Formats

Li, Lian. Final Technical Report. United States: N. p., 2017. Web. doi:10.2172/1346183.
Li, Lian. Final Technical Report. United States. doi:10.2172/1346183.
Li, Lian. Wed . "Final Technical Report". United States. doi:10.2172/1346183. https://www.osti.gov/servlets/purl/1346183.
@article{osti_1346183,
title = {Final Technical Report},
author = {Li, Lian},
abstractNote = {Our BES supported program integrates molecular beam epitaxy growth with in situ atomic scale imaging using scanning tunneling microscopy/spectroscopy and atomic force microscopy. Aided by density functional theory calculations, we explore enhanced functionalities emerging from the interplay of strain, proximity, and spin-orbit interactions in heterostructures of wide band gap semiconductors, graphene, and Dirac materials, focusing on three thrusts: 1) doping wide bandgap semiconductors and graphene; 2) graphene nanoribbons and graphene-semiconductor heterostructures; and 3) Dirac materials. Our findings and discoveries have led to the publication of one book chapter and twenty-three refereed journal articles, including several in high impact journals such as Nature Communications, Physical Review Letters, and Nano Letters. Highlights of each thrust are provided in the report.},
doi = {10.2172/1346183},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Mar 08 00:00:00 EST 2017},
month = {Wed Mar 08 00:00:00 EST 2017}
}

Technical Report:

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