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Title: High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors

Abstract

An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

Inventors:
; ; ; ; ;
Publication Date:
Research Org.:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1346017
Patent Number(s):
9,590,026
Application Number:
14/744,124
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION OSTI
DOE Contract Number:
B601996
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Jun 19
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Deligianni, Hariklia, Gallagher, William J., Mason, Maurice, O'Sullivan, Eugene J., Romankiw, Lubomyr T., and Wang, Naigang. High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors. United States: N. p., 2017. Web.
Deligianni, Hariklia, Gallagher, William J., Mason, Maurice, O'Sullivan, Eugene J., Romankiw, Lubomyr T., & Wang, Naigang. High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors. United States.
Deligianni, Hariklia, Gallagher, William J., Mason, Maurice, O'Sullivan, Eugene J., Romankiw, Lubomyr T., and Wang, Naigang. Tue . "High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors". United States. doi:. https://www.osti.gov/servlets/purl/1346017.
@article{osti_1346017,
title = {High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors},
author = {Deligianni, Hariklia and Gallagher, William J. and Mason, Maurice and O'Sullivan, Eugene J. and Romankiw, Lubomyr T. and Wang, Naigang},
abstractNote = {An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 07 00:00:00 EST 2017},
month = {Tue Mar 07 00:00:00 EST 2017}
}

Patent:

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  • An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magneticmore » material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.« less
  • An electrical component in the form of an inductor or transformer is disclosed which includes one or more coils and a magnetic polymer material located near the coils or supporting the coils to provide an electromagnetic interaction therewith. The magnetic polymer material is preferably a cured magnetic epoxy which includes a mercaptan derivative having a ferromagnetic atom chemically bonded therein. The ferromagnetic atom can be either a transition metal or rare-earth atom.
  • An electrical component in the form of an inductor or transformer is disclosed which includes one or more coils and a magnetic polymer material located near the coils or supporting the coils to provide an electromagnetic interaction therewith. The magnetic polymer material is preferably a cured magnetic epoxy which includes a mercaptan derivative having a ferromagnetic atom chemically bonded therein. The ferromagnetic atom can be either a transition metal or rare-earth atom.
  • Objects of this invention are: to form high-temperature stable isolation regions in InP; to provide InP wafers that allow greater flexibility in the design and fabrication of discrete devices; to provide new and improved InP semiconductor devices in n-type InP; to provide high-resisitivity isolation regions in InP; to extend the usefulness of damage-induced isolation in n-type InP by making possible processes in which the isolation implantation precedes the alloying of ohmic contacts; and to provide n-type InP substrates without unwanted conductive layers. The above and other object are realized by an InP wafer comprising a S.I. InP substrate; a n-typemore » InP active layer disposed on the substrate; and oxygen ion implanted isolation regions disposed in the active layer. The S.I. InP dopant may comprise either Fe or Cr.« less
  • A polycrystalline alloy is composed essentially of, by weight %: 15% to 30% Mo, 3% to 10% Al, up to 10% Cr, up to 10% Fe, up to 2% Si, 0.01% to 0.2% C, 0.01% to 0.04% B, balance Ni.