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Title: Systems and methods for advanced ultra-high-performance InP solar cells

Abstract

Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

Inventors:
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1346013
Patent Number(s):
9,590,131
Application Number:
14/226,540
Assignee:
Alliance for Sustainable Energy, LLC NREL
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Mar 26
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats

Wanlass, Mark. Systems and methods for advanced ultra-high-performance InP solar cells. United States: N. p., 2017. Web.
Wanlass, Mark. Systems and methods for advanced ultra-high-performance InP solar cells. United States.
Wanlass, Mark. Tue . "Systems and methods for advanced ultra-high-performance InP solar cells". United States. https://www.osti.gov/servlets/purl/1346013.
@article{osti_1346013,
title = {Systems and methods for advanced ultra-high-performance InP solar cells},
author = {Wanlass, Mark},
abstractNote = {Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {3}
}

Patent:

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Works referenced in this record:

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