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Title: Imaging the in-plane distribution of helium precipitates at a Cu/V interface

Abstract

Here, we describe a transmission electron microscopy investigation of the distribution of helium precipitates within the plane of an interface between Cu and V. Statistical analysis of precipitate locations reveals a weak tendency for interfacial precipitates to align along $$\langle$$110$$\rangle$$-type crystallographic directions within the Cu layer. Comparison of these findings with helium-free Cu/V interfaces suggests that the precipitates may be aggregating preferentially along atomic-size steps in the interface created by threading dislocations in the Cu layer. Our observations also suggest that some precipitates may be aggregating along intersections between interfacial misfit dislocations.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2];  [1]; ORCiD logo [1];  [3]; ORCiD logo [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  3. Texas A & M Univ., College Station, TX (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1345945
Report Number(s):
LA-UR-16-29316
Journal ID: ISSN 2166-3831
Grant/Contract Number:  
AC52-06NA25396
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Materials Research Letters
Additional Journal Information:
Journal Volume: 5; Journal Issue: 5; Journal ID: ISSN 2166-3831
Publisher:
Taylor and Francis
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; helium precipitates; interfaces; physical vapor deposition; ion implantation; metal nanocomposites

Citation Formats

Chen, Di, Li, Nan, Yuryev, Dina, Wen, Juan, Baldwin, Jon Kevin Scott, Demkowicz, Michael, and Wang, Yongqiang. Imaging the in-plane distribution of helium precipitates at a Cu/V interface. United States: N. p., 2017. Web. doi:10.1080/21663831.2017.1287132.
Chen, Di, Li, Nan, Yuryev, Dina, Wen, Juan, Baldwin, Jon Kevin Scott, Demkowicz, Michael, & Wang, Yongqiang. Imaging the in-plane distribution of helium precipitates at a Cu/V interface. United States. doi:10.1080/21663831.2017.1287132.
Chen, Di, Li, Nan, Yuryev, Dina, Wen, Juan, Baldwin, Jon Kevin Scott, Demkowicz, Michael, and Wang, Yongqiang. Wed . "Imaging the in-plane distribution of helium precipitates at a Cu/V interface". United States. doi:10.1080/21663831.2017.1287132. https://www.osti.gov/servlets/purl/1345945.
@article{osti_1345945,
title = {Imaging the in-plane distribution of helium precipitates at a Cu/V interface},
author = {Chen, Di and Li, Nan and Yuryev, Dina and Wen, Juan and Baldwin, Jon Kevin Scott and Demkowicz, Michael and Wang, Yongqiang},
abstractNote = {Here, we describe a transmission electron microscopy investigation of the distribution of helium precipitates within the plane of an interface between Cu and V. Statistical analysis of precipitate locations reveals a weak tendency for interfacial precipitates to align along $\langle$110$\rangle$-type crystallographic directions within the Cu layer. Comparison of these findings with helium-free Cu/V interfaces suggests that the precipitates may be aggregating preferentially along atomic-size steps in the interface created by threading dislocations in the Cu layer. Our observations also suggest that some precipitates may be aggregating along intersections between interfacial misfit dislocations.},
doi = {10.1080/21663831.2017.1287132},
journal = {Materials Research Letters},
number = 5,
volume = 5,
place = {United States},
year = {Wed Feb 15 00:00:00 EST 2017},
month = {Wed Feb 15 00:00:00 EST 2017}
}

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Cited by: 3 works
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Works referenced in this record:

Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks
journal, July 1975