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Title: Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes

Abstract

A system is presented that is capable of measuring sub-nanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 – 1 A) and reverse voltages (0 – 10 kV). The system utilizes the step recovery technique and comprises a cable pulser based on a silicon (Si) Photoconductive Semiconductor Switch (PCSS) triggered with an Ultra Short Pulse Laser (USPL), a pulse charging circuit, a diode biasing circuit, and resistive and capacitive voltage monitors. The PCSS based cable pulser transmits a 130 ps rise time pulse down a transmission line to a capacitively coupled diode, which acts as the terminating element of the transmission line. The temporal nature of the pulse reflected by the diode provides the reverse recovery characteristics of the diode, measured with a high bandwidth capacitive probe integrated into the cable pulser. Furthermore, this system was used to measure the reverse recovery times (including the creation and charging of the depletion region) for two Avogy gallium nitride (GaN) diodes; the initial reverse recovery time was found to be 4 ns and varied minimally over reverse biases of 50 – 100 V and forward current of 1 – 100 mA.

Authors:
 [1];  [2]; ORCiD logo [2];  [2];  [2];  [3];  [2]
  1. Texas Tech Univ., Lubbock, TX (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Avogy, Inc., San Jose, CA (United States); U.S. Dept. of Energy, Washington, D.C. (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1345539
Report Number(s):
SAND-2017-0840J
Journal ID: ISSN 0885-8993; 650741
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
IEEE Transactions on Power Electronics
Additional Journal Information:
Journal Volume: 32; Journal Issue: 12; Journal ID: ISSN 0885-8993
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
30 DIRECT ENERGY CONVERSION; power diodes; reverse recovery; photoconductive semiconductor switches; ultra-short pulse lasers; wide-bandgap devices; power electronics

Citation Formats

Mauch, Daniel L., Zutavern, Fred J., Delhotal, Jarod J., King, Michael P., Neely, Jason, Kizilyalli, Isik, and Kaplar, Robert J. Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes. United States: N. p., 2017. Web. doi:10.1109/tpel.2017.2657491.
Mauch, Daniel L., Zutavern, Fred J., Delhotal, Jarod J., King, Michael P., Neely, Jason, Kizilyalli, Isik, & Kaplar, Robert J. Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes. United States. doi:10.1109/tpel.2017.2657491.
Mauch, Daniel L., Zutavern, Fred J., Delhotal, Jarod J., King, Michael P., Neely, Jason, Kizilyalli, Isik, and Kaplar, Robert J. Wed . "Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes". United States. doi:10.1109/tpel.2017.2657491. https://www.osti.gov/servlets/purl/1345539.
@article{osti_1345539,
title = {Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes},
author = {Mauch, Daniel L. and Zutavern, Fred J. and Delhotal, Jarod J. and King, Michael P. and Neely, Jason and Kizilyalli, Isik and Kaplar, Robert J.},
abstractNote = {A system is presented that is capable of measuring sub-nanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 – 1 A) and reverse voltages (0 – 10 kV). The system utilizes the step recovery technique and comprises a cable pulser based on a silicon (Si) Photoconductive Semiconductor Switch (PCSS) triggered with an Ultra Short Pulse Laser (USPL), a pulse charging circuit, a diode biasing circuit, and resistive and capacitive voltage monitors. The PCSS based cable pulser transmits a 130 ps rise time pulse down a transmission line to a capacitively coupled diode, which acts as the terminating element of the transmission line. The temporal nature of the pulse reflected by the diode provides the reverse recovery characteristics of the diode, measured with a high bandwidth capacitive probe integrated into the cable pulser. Furthermore, this system was used to measure the reverse recovery times (including the creation and charging of the depletion region) for two Avogy gallium nitride (GaN) diodes; the initial reverse recovery time was found to be 4 ns and varied minimally over reverse biases of 50 – 100 V and forward current of 1 – 100 mA.},
doi = {10.1109/tpel.2017.2657491},
journal = {IEEE Transactions on Power Electronics},
number = 12,
volume = 32,
place = {United States},
year = {Wed Mar 01 00:00:00 EST 2017},
month = {Wed Mar 01 00:00:00 EST 2017}
}

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