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Title: Thirteen Decakis(trifluoromethyl)decahydro(C60-Ih)[5,6]fullerenes (C60(CF3)10). Structures and Structure-Related Properties of the Largest Set of Fullerene(X)n Isomers

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1345406
Resource Type:
Book
Resource Relation:
Related Information: New Fluorinated Carbons: Fundamentals and Applications
Country of Publication:
United States
Language:
ENGLISH

Citation Formats

Bukovsky, E.V., Larson, B.W., Clikeman, T.T., Chen, Y.-S., Popov, A.A., Boltalina, O.V., and Strauss, S.H.. Thirteen Decakis(trifluoromethyl)decahydro(C60-Ih)[5,6]fullerenes (C60(CF3)10). Structures and Structure-Related Properties of the Largest Set of Fullerene(X)n Isomers. United States: N. p., 2017. Web.
Bukovsky, E.V., Larson, B.W., Clikeman, T.T., Chen, Y.-S., Popov, A.A., Boltalina, O.V., & Strauss, S.H.. Thirteen Decakis(trifluoromethyl)decahydro(C60-Ih)[5,6]fullerenes (C60(CF3)10). Structures and Structure-Related Properties of the Largest Set of Fullerene(X)n Isomers. United States.
Bukovsky, E.V., Larson, B.W., Clikeman, T.T., Chen, Y.-S., Popov, A.A., Boltalina, O.V., and Strauss, S.H.. Mon . "Thirteen Decakis(trifluoromethyl)decahydro(C60-Ih)[5,6]fullerenes (C60(CF3)10). Structures and Structure-Related Properties of the Largest Set of Fullerene(X)n Isomers". United States. doi:.
@article{osti_1345406,
title = {Thirteen Decakis(trifluoromethyl)decahydro(C60-Ih)[5,6]fullerenes (C60(CF3)10). Structures and Structure-Related Properties of the Largest Set of Fullerene(X)n Isomers},
author = {Bukovsky, E.V. and Larson, B.W. and Clikeman, T.T. and Chen, Y.-S. and Popov, A.A. and Boltalina, O.V. and Strauss, S.H.},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Feb 27 00:00:00 EST 2017},
month = {Mon Feb 27 00:00:00 EST 2017}
}

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  • Investigation of the improvement of effective lifetime (T) induced by using a-Si{sub 1{minus}x}N{sub x}:H/SiO{sub 2} double-layer passivation structures showed that the T values obtained were higher than those obtained when using a-Si{sub 1{minus}x}N{sub x}:H or SiO{sub 2} monolayer passivation. Furthermore, the T of a-Si{sub 1{minus}x}N{sub x}:H/SiO{sub 2} structures was greatly increased with increase of bias light intensity. This effect was almost independent of the (x/1{minus}x) ratio of the a-Si{sub 1{minus}x}N{sub x}:H layer, and it is therefore possible to control the refractive index of a-Si{sub 1{minus}x}N{sub x}:H layer independently while keeping good passivation effect.
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