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Title: Optical and electrical properties of indium tin oxide films near their laser damage threshold [Electrical and optical properties of indium tin oxide films under multi-pulse laser irradiation at 1064 nm]

Abstract

In this paper, we investigated whether the optical and electrical properties of indium tin oxide (ITO) films are degraded under laser irradiation below their laser ablation threshold. While performing multi-pulse laser damage experiments on a single ITO film (4.7 ns, 1064 nm, 10 Hz), we examined the optical and electrical properties in situ. A decrease in reflectance was observed prior to laser damage initiation. However, under sub-damage threshold irradiation, conductivity and reflectance of the film were maintained without measurable degradation. This indicates that ITO films in optoelectronic devices may be operated below their lifetime laser damage threshold without noticeable performance degradation.

Authors:
 [1];  [1];  [1];  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1345329
Report Number(s):
LLNL-JRNL-712977
Journal ID: ISSN 2159-3930
Grant/Contract Number:
AC52-07NA27344
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Optical Materials Express
Additional Journal Information:
Journal Volume: 7; Journal Issue: 3; Journal ID: ISSN 2159-3930
Publisher:
Optical Society of America (OSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; lasers and laser optics; laser materials; laser damage; optics at surfaces

Citation Formats

Yoo, Jae -Hyuck, Lange, Andrew, Bude, Jeff, and Elhadj, Selim. Optical and electrical properties of indium tin oxide films near their laser damage threshold [Electrical and optical properties of indium tin oxide films under multi-pulse laser irradiation at 1064 nm]. United States: N. p., 2017. Web. doi:10.1364/OME.7.000817.
Yoo, Jae -Hyuck, Lange, Andrew, Bude, Jeff, & Elhadj, Selim. Optical and electrical properties of indium tin oxide films near their laser damage threshold [Electrical and optical properties of indium tin oxide films under multi-pulse laser irradiation at 1064 nm]. United States. doi:10.1364/OME.7.000817.
Yoo, Jae -Hyuck, Lange, Andrew, Bude, Jeff, and Elhadj, Selim. Fri . "Optical and electrical properties of indium tin oxide films near their laser damage threshold [Electrical and optical properties of indium tin oxide films under multi-pulse laser irradiation at 1064 nm]". United States. doi:10.1364/OME.7.000817. https://www.osti.gov/servlets/purl/1345329.
@article{osti_1345329,
title = {Optical and electrical properties of indium tin oxide films near their laser damage threshold [Electrical and optical properties of indium tin oxide films under multi-pulse laser irradiation at 1064 nm]},
author = {Yoo, Jae -Hyuck and Lange, Andrew and Bude, Jeff and Elhadj, Selim},
abstractNote = {In this paper, we investigated whether the optical and electrical properties of indium tin oxide (ITO) films are degraded under laser irradiation below their laser ablation threshold. While performing multi-pulse laser damage experiments on a single ITO film (4.7 ns, 1064 nm, 10 Hz), we examined the optical and electrical properties in situ. A decrease in reflectance was observed prior to laser damage initiation. However, under sub-damage threshold irradiation, conductivity and reflectance of the film were maintained without measurable degradation. This indicates that ITO films in optoelectronic devices may be operated below their lifetime laser damage threshold without noticeable performance degradation.},
doi = {10.1364/OME.7.000817},
journal = {Optical Materials Express},
number = 3,
volume = 7,
place = {United States},
year = {Fri Feb 10 00:00:00 EST 2017},
month = {Fri Feb 10 00:00:00 EST 2017}
}

Journal Article:
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  • Laser-induced-damage characteristics of commercial indium-tin oxide (ITO) films deposited by DC magnetron sputtering deposition on K9 glass substrates as a function of the film thickness have been studied at 1064 nm with a 10 ns laser pulse in the 1-on-1 mode, and the various mechanisms for thickness effect on laser-induced-damage threshold (LIDT) of the film have been discussed in detail. It is observed that laser-damage-resistance of ITO film shows dramatic thickness effect with the LIDT of the 50-nm ITO film 7.6 times as large as the value of 300 nm film, and the effect of depressed carrier density by decreasingmore » the film thickness is demonstrated to be the primary reason. Our experiment findings indicate that searching transparent conductive oxide (TCO) film with low carrier density and high carrier mobility is an efficient technique to improve the laser-damage-resistance of TCO films based on maintaining their well electric conductivity.« less
  • The effect of heat treatment in various environments on the electrical and optical properties of indium--tin oxide (ITO) sputtered films has been investigated. As the resistivity is decreased by heat treatment in H/sub 2/ from 8.3 x 10/sup -3/ to 4.3 x 10/sup -4/ ..cap omega.. cm, the optical band gap increases from 3.05 to 3.42 eV consistent with a Burstein shift and intrinsic band gap of 2.98 eV, and for resistivities less than 8.3 x 10/sup -4/ ..cap omega.. cm there is a rapid decrease in transmission at longer wavelengths due to free-carrier absorption and formation of dendritic precipitates.more » Careful control over all sputtering variables is essential to obtain reproducible properties.« less
  • Indium tin oxide (ITO) films (0.3 {mu}m thick), with a doping level of 28 mol% SnO{sub 2}, were prepared by a radio frequency magnetron sputtering method. The effects of postannealing on the microstructure and the electrical properties of the ITO films were investigated. Examination by TEM shows that the postannealing treatment induced SnO{sub 2} precipitates along the grain boundaries. The resistivity increased with increasing postannealing temperatures. The mobility of carriers appears to be responsible for the resistivity increase in these specimens.
  • Indium tin oxide (ITO) thin films have been grown onto soda-lime glass substrates by sputtering at room temperature with various oxygen to argon partial pressure ratios. After deposition, the samples have been annealed at temperatures ranging from 100 to 500 degree sign C in nitrogen or in air. The structure, optical, and electrical characteristics of the ITO coatings have been analyzed as a function of the deposition and the annealing parameters by x-ray diffraction, spectrophotometry, and Hall effect measurements. It has been found that the as-grown amorphous layers crystallize in the cubic structure by heating above 200 degree sign C.more » Simultaneously, the visible optical transmittance increases and the electrical resistance decreases, in proportions that depend mainly on the sputtering conditions. The lowest resistivity values have been obtained by annealing at 400 degree sign C in nitrogen, where the highest carrier concentrations are achieved, related to oxygen vacancy creation. Some relationships between the analyzed properties have been established, showing the dependence of the cubic lattice distortion and the infrared optical characteristics on the carrier concentration.« less
  • We report the dependence of electronic and optical properties on the Ag thickness in transparent conductive indium tin oxide (ITO)-Ag-ITO (IMI) multilayer films deposited on polyethylene naphthalate flexible substrate by sputtering at room temperature. The electrical properties (such as carrier concentration, mobility, and resistivity) changed significantly with incorporation of Ag between the ITO layers. Comparison of sheet resistance of the IMI multilayers and the calculated sheet resistance of the Ag midlayer indicates that most of the conduction is through the Ag film. The critical thickness of Ag to form a continuous conducting layer is found to be 8 nm usingmore » electrical and optical analysis. A conduction mechanism is proposed to elucidate the mobility variation with increased Ag thickness. Carrier transport is limited by either interface scattering or grain-boundary scattering depending on the thickness of the Ag midlayer. Interface scattering is dominant for thinner (5.5-7 nm) Ag and grain-boundary scattering is dominant for thicker (8-10.5 nm) Ag midlayers. In addition, the effect of varying Ag midlayer thickness on transmittance behavior is also discussed. A figure of merit is used to compare performance of the IMI multilayer systems as a function of Ag thickness.« less