Lateral electrochemical etching of III-nitride materials for microfabrication
Patent
·
OSTI ID:1345219
Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.
- Research Organization:
- Yale Univ., New Haven, CT (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-07ER46387
- Assignee:
- Yale University
- Patent Number(s):
- 9,583,353
- Application Number:
- 13/923,248
- OSTI ID:
- 1345219
- Resource Relation:
- Patent File Date: 2013 Jun 20
- Country of Publication:
- United States
- Language:
- English
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