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Title: Lateral electrochemical etching of III-nitride materials for microfabrication

Abstract

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

Inventors:
Publication Date:
Research Org.:
Yale Univ., New Haven, CT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1345219
Patent Number(s):
9,583,353
Application Number:
13/923,248
Assignee:
Yale University CHO
DOE Contract Number:  
FG02-07ER46387
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Jun 20
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Han, Jung. Lateral electrochemical etching of III-nitride materials for microfabrication. United States: N. p., 2017. Web.
Han, Jung. Lateral electrochemical etching of III-nitride materials for microfabrication. United States.
Han, Jung. Tue . "Lateral electrochemical etching of III-nitride materials for microfabrication". United States. doi:. https://www.osti.gov/servlets/purl/1345219.
@article{osti_1345219,
title = {Lateral electrochemical etching of III-nitride materials for microfabrication},
author = {Han, Jung},
abstractNote = {Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 28 00:00:00 EST 2017},
month = {Tue Feb 28 00:00:00 EST 2017}
}

Patent:

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