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Systems and methods for forming solar cells with CuInSe.sub.2 and Cu(In,Ga)Se.sub.2 films

Patent ·
OSTI ID:1345209

Systems and methods for forming solar cells with CuInSe.sub.2 and Cu(In,Ga)Se.sub.2 films are provided. In one embodiment, a method comprises: during a first stage (220), performing a mass transport through vapor transport of an indium chloride (InCl.sub.x) vapor (143, 223) and Se vapor (121, 225) to deposit a semiconductor film (212, 232, 252) upon a substrate (114, 210, 230, 250); heating the substrate (114, 210, 230, 250) and the semiconductor film to a desired temperature (112); during a second stage (240) following the first stage (220), performing a mass transport through vapor transport of a copper chloride (CuCl.sub.x) vapor (143, 243) and Se vapor (121, 245) to the semiconductor film (212, 232, 252); and during a third stage (260) following the second stage (240), performing a mass transport through vapor transport of an indium chloride (InCl.sub.x) vapor (143, 263) and Se vapor (121, 265) to the semiconductor film (212, 232, 252).

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-08GO28308
Assignee:
Alliance for Sustainable Energy, LLC
Patent Number(s):
9,583,667
Application Number:
14/382,106
OSTI ID:
1345209
Country of Publication:
United States
Language:
English

References (2)

The formation of large-grain CulnSe2 films by selenization by high-rate Se transport under moderate vacuum conditions journal April 1995
Development of thin-film Cu(In,Ga)Se2 and CdTe solar cells
  • Romeo, A.; Terheggen, M.; Abou-Ras, D.
  • Progress in Photovoltaics: Research and Applications, Vol. 12, Issue 23, p. 93-111 https://doi.org/10.1002/pip.527
journal March 2004