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Title: Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

Abstract

The etch rates of NH 4OH:H 2O 2 and C 6H 8O 7:H 2O 2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH 4OH:H 2O 2 solution has a greater etch rate differential for the GaSb/GaAs material system than C 6H 8O 7:H 2O 2 solution. The selectivity of NH 4OH:H 2O 2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C 6H 8O 7:H 2O 2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).

Authors:
 [1];  [1]
  1. Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials
Publication Date:
Research Org.:
Univ. of New Mexico, Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1344781
Report Number(s):
DE-EE0004004
DOE Contract Number:
EE0004004
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lavrova, Olga, and Balakrishnan, Ganesh. Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes. United States: N. p., 2017. Web. doi:10.2172/1344781.
Lavrova, Olga, & Balakrishnan, Ganesh. Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes. United States. doi:10.2172/1344781.
Lavrova, Olga, and Balakrishnan, Ganesh. Fri . "Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes". United States. doi:10.2172/1344781. https://www.osti.gov/servlets/purl/1344781.
@article{osti_1344781,
title = {Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes},
author = {Lavrova, Olga and Balakrishnan, Ganesh},
abstractNote = {The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).},
doi = {10.2172/1344781},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Feb 24 00:00:00 EST 2017},
month = {Fri Feb 24 00:00:00 EST 2017}
}

Technical Report:

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