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Title: Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy

Abstract

This letter studies the effects of atomic N, metastable N*2N2*, and ionic species on the optical properties of dilute nitride materials. Ga 0.8In 0.2N 0.01As 0.99Ga 0.8In 0.2N 0.01As 0.99 was grown using a 1% N2N2 in Ar gas mix from an Applied-Epi Unibulb™ rf plasma source. Isonitrogen samples with and without ions were studied using various plasma operating conditions. Optical emission spectrometry was used to characterize relative proportions of different active nitrogen plasma species (atomic N and metastable N*2N2*). Samples grown without ions and with a higher proportion of atomic N resulted in the best overall material quality, although this improvement was observed at high annealing temperatures. At lower annealing temperatures, increased blueshifts were observed for samples grown with a higher proportion of atomic N; however, there was no noticeable influence of ions on blueshift regardless of whether atomic N or metastable N*2N2* was the dominant species present in the plasma. The key implication of this work is that it helps to elucidate a possible reason for some of the contradictory reports in the literature. The ions are not solely responsible for the commonly reported “plasma damage.” Furthermore, we demonstrate herein that atomic N and metastable N*2N2* each havemore » different effects on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy.« less

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1344749
Report Number(s):
NREL/JA-520-42604
Journal ID: ISSN 0003-6951
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 91; Journal Issue: 19; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; annealing; semiconductor growth; molecular beam epitaxy; optical properties; emission spectroscopy

Citation Formats

Oye, Michael M., Mattord, Terry J., Hallock, Gary A., Bank, Seth R., Wistey, Mark A., Reifsnider, Jason M., Ptak, Aaron J., Yuen, Homan B., Harris, James S., and Holmes, Archie L. Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy. United States: N. p., 2007. Web. doi:10.1063/1.2806226.
Oye, Michael M., Mattord, Terry J., Hallock, Gary A., Bank, Seth R., Wistey, Mark A., Reifsnider, Jason M., Ptak, Aaron J., Yuen, Homan B., Harris, James S., & Holmes, Archie L. Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy. United States. https://doi.org/10.1063/1.2806226
Oye, Michael M., Mattord, Terry J., Hallock, Gary A., Bank, Seth R., Wistey, Mark A., Reifsnider, Jason M., Ptak, Aaron J., Yuen, Homan B., Harris, James S., and Holmes, Archie L. Mon . "Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy". United States. https://doi.org/10.1063/1.2806226.
@article{osti_1344749,
title = {Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy},
author = {Oye, Michael M. and Mattord, Terry J. and Hallock, Gary A. and Bank, Seth R. and Wistey, Mark A. and Reifsnider, Jason M. and Ptak, Aaron J. and Yuen, Homan B. and Harris, James S. and Holmes, Archie L.},
abstractNote = {This letter studies the effects of atomic N, metastable N*2N2*, and ionic species on the optical properties of dilute nitride materials. Ga0.8In0.2N0.01As0.99Ga0.8In0.2N0.01As0.99 was grown using a 1% N2N2 in Ar gas mix from an Applied-Epi Unibulb™ rf plasma source. Isonitrogen samples with and without ions were studied using various plasma operating conditions. Optical emission spectrometry was used to characterize relative proportions of different active nitrogen plasma species (atomic N and metastable N*2N2*). Samples grown without ions and with a higher proportion of atomic N resulted in the best overall material quality, although this improvement was observed at high annealing temperatures. At lower annealing temperatures, increased blueshifts were observed for samples grown with a higher proportion of atomic N; however, there was no noticeable influence of ions on blueshift regardless of whether atomic N or metastable N*2N2* was the dominant species present in the plasma. The key implication of this work is that it helps to elucidate a possible reason for some of the contradictory reports in the literature. The ions are not solely responsible for the commonly reported “plasma damage.” Furthermore, we demonstrate herein that atomic N and metastable N*2N2* each have different effects on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy.},
doi = {10.1063/1.2806226},
url = {https://www.osti.gov/biblio/1344749}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 91,
place = {United States},
year = {2007},
month = {11}
}