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Title: Delicate competing electronic states in ultrathin manganite films

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1344593
Grant/Contract Number:
DOE DE-SC0002136
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 8; Related Information: CHORUS Timestamp: 2017-02-23 15:11:59; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Liao, Zhaoliang, Jin, Rongying, Plummer, E. W., and Zhang, Jiandi. Delicate competing electronic states in ultrathin manganite films. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.085130.
Liao, Zhaoliang, Jin, Rongying, Plummer, E. W., & Zhang, Jiandi. Delicate competing electronic states in ultrathin manganite films. United States. doi:10.1103/PhysRevB.95.085130.
Liao, Zhaoliang, Jin, Rongying, Plummer, E. W., and Zhang, Jiandi. Tue . "Delicate competing electronic states in ultrathin manganite films". United States. doi:10.1103/PhysRevB.95.085130.
@article{osti_1344593,
title = {Delicate competing electronic states in ultrathin manganite films},
author = {Liao, Zhaoliang and Jin, Rongying and Plummer, E. W. and Zhang, Jiandi},
abstractNote = {},
doi = {10.1103/PhysRevB.95.085130},
journal = {Physical Review B},
number = 8,
volume = 95,
place = {United States},
year = {Tue Feb 21 00:00:00 EST 2017},
month = {Tue Feb 21 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.95.085130

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  • Using neutron and x-ray diffraction, we report the discovery of competing ground states near a multicritical point in A-site layer-ordered La{sub 1-x}Ba{sub 1+x}Mn{sub 2}O{sub 6} materials. We demonstrate the dual effects of deliberate disorder on the system's stability, the freezing of the competing states, and the drastic reduction in magnetic fields required for the suppression of charge- and orbital-ordered phases. Our work suggests that quenched disorder is not the primary reason for phase separation and magnetoresistance and that increased doping leads to electronic phase separation.
  • Using neutron and x-ray diffraction, we report the discovery of competing ground states near a multicritical point in A-site layer-ordered La{sub 1-x}Ba{sub 1+x}Mn{sub 2}O{sub 6} materials. We demonstrate the dual effects of deliberate disorder on the system's stability, the freezing of the competing states, and the drastic reduction in magnetic fields required for the suppression of charge- and orbital-ordered phases. Our work suggests that quenched disorder is not the primary reason for phase separation and magnetoresistance and that increased doping leads to electronic phase separation.
  • Angular-resolved photoemission and inverse-photoemission spectroscopies have been used to investigate the valence-electron states in ultrathin films of silver and copper deposited on a V(100) surface. For both noble metals, discrete {ital s}-{ital p} derived states are observed within the {Delta}{sub 1} gap of the vanadium substrate (approximately {plus_minus}2 eV around {ital E}{sub {ital F}}). These states are analyzed using a simple quantum-well picture. For a pseudomorphically grown (centered tetragonal) silver film in the bulklike limit we have determined {ital k}{sub {ital F}} (1.19 A{sup {minus}1}) and the energies of critical points, {ital X}{sub 1} (7.60 {plus_minus} 0.15 eV) and {italmore » X}{sub 4{sup {prime}}} (2.5 {plus_minus} 0.3 eV) in the {ital E}({ital k}) dispersion of the {Delta}{sub 1} band in the {Gamma}-{Delta}-{ital X} direction. The bottom of the {Delta}{sub 1} band, i.e., {Gamma}{sub 1} point, was estimated to be {minus}6.4{plus_minus}0.3 eV by fitting the experimentally determined points with a free-electron parabola. In the case of copper overlayers, it was not possible to determine the dispersion of the bulklike {Delta}{sub 1} band because Cu films thicker than two monolayers showed poor order. At low coverages (1{endash}2 ML) of both silver and copper, we find that dispersion in {ital k}{sub {parallel}} of the discrete {ital s}-{ital p} quantum-well states is described by a significantly enhanced electron effective mass ({ital m}{sup {asterisk}}{gt}2{ital m}{sub {ital e}}). This is interpreted as due to strong hybridization of these states with the {ital d} derived states of the vanadium substrate. {copyright} {ital 1996 The American Physical Society.}« less
  • Resistance related to magnetic domain walls in compressive-strained epitaxial manganite ultrathin films has been studied. The samples were demagnetized in different ways to induce either multidomain or single domain states. Very large difference in resistance was observed between the two states, which was attributed to the domain wall resistance. The magnitude of the domain wall resistance was found to be different in different manganite compounds. We have shown that large domain wall resistance can be obtained in strained ultrathin manganite films and the result cannot be simply explained by the existing models. {copyright} 2001 American Institute of Physics.
  • The transport and magnetic properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin-films grown by pulsed laser deposition on (LaAlO{sub 3}){sub 0.3}(SrAl{sub 0.5}Ta{sub 0.5}O{sub 3}){sub 0.7} single crystal substrates have been investigated. A systematic series with various thicknesses of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} was used to establish a phase diagram - which showed a clear difference compared to films grown on SrTiO{sub 3} substrates, highlighting the importance of film thickness and substrate strain. At 8 unit cells, the boundary between the metallic and insulating ground states, a second abrupt metal-insulator transition was observed at low temperatures, which could be tuned with bymore » magnetic field, and is interpreted as a signature of electronic phase separation.« less