Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype
Journal Article
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· Journal of Instrumentation
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- Univ. of Geneva (Switzerland). Dept. of Nuclear and Particle Physics (DPNC)
- Univ. of Liverpool (United Kingdom). Dept. of Physics
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of Science and Technology of China, Hefei (China). Dept. of Modern Physics
- Univ. of Bern (Switzerland). Albert Einstein Center for Fundamental Physics and Laboratory for High Energy Physics
- Univ. of Geneva (Switzerland). Dept. of Nuclear and Particle Physics (DPNC); Univ. of Liverpool (United Kingdom). Dept. of Physics
- Univ. of Geneva (Switzerland). Dept. of Nuclear and Particle Physics (DPNC); European Organization for Nuclear Research (CERN), Geneva (Switzerland)
- Karlsruhe Inst. of Technology (KIT) (Germany)
We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), High Energy Physics (HEP)
- Grant/Contract Number:
- SC00112704
- OSTI ID:
- 1344241
- Report Number(s):
- BNL-113561-2017-JA; TRN: US1701773
- Journal Information:
- Journal of Instrumentation, Vol. 11, Issue 07; ISSN 1748-0221
- Publisher:
- Institute of Physics (IOP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 4 works
Citation information provided by
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