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Title: Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

Abstract

We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

Authors:
 [1];  [1];  [2];  [3];  [3];  [1];  [1];  [1];  [1];  [1];  [3];  [4];  [5];  [6];  [1];  [1];  [7];  [8];  [5];  [7] more »;  [1];  [2];  [5];  [3];  [3] « less
  1. Univ. of Geneva (Switzerland). Dept. of Nuclear and Particle Physics (DPNC)
  2. Univ. of Liverpool (United Kingdom). Dept. of Physics
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of Science and Technology of China, Hefei (China). Dept. of Modern Physics
  5. Univ. of Bern (Switzerland). Albert Einstein Center for Fundamental Physics and Laboratory for High Energy Physics
  6. Univ. of Geneva (Switzerland). Dept. of Nuclear and Particle Physics (DPNC); Univ. of Liverpool (United Kingdom). Dept. of Physics
  7. Univ. of Geneva (Switzerland). Dept. of Nuclear and Particle Physics (DPNC); European Organization for Nuclear Research (CERN), Geneva (Switzerland)
  8. Karlsruhe Inst. of Technology (KIT) (Germany)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
OSTI Identifier:
1344241
Report Number(s):
BNL-113561-2017-JA
Journal ID: ISSN 1748-0221; TRN: US1701773
Grant/Contract Number:
SC00112704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Instrumentation
Additional Journal Information:
Journal Volume: 11; Journal Issue: 07; Journal ID: ISSN 1748-0221
Publisher:
Institute of Physics (IOP)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; Solid state detectors; Si microstrip and pad detectors; Particle tracking detectors; Electronic detector readout concepts; Performance of High Energy Physics Detectors

Citation Formats

Benoit, M., de Mendizabal, J. Bilbao, Casse, G., Chen, H., Chen, K., Bello, F. A. Di, Ferrere, D., Golling, T., Gonzalez-Sevilla, S., Iacobucci, G., Lanni, F., Liu, H., Meloni, F., Meng, L., Miucci, A., Muenstermann, D., Nessi, M., Perić, I., Rimoldi, M., Ristic, B., Pinto, M. Vicente Barrero, Vossebeld, J., Weber, M., Wu, W., and Xu, L. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype. United States: N. p., 2016. Web. doi:10.1088/1748-0221/11/07/P07019.
Benoit, M., de Mendizabal, J. Bilbao, Casse, G., Chen, H., Chen, K., Bello, F. A. Di, Ferrere, D., Golling, T., Gonzalez-Sevilla, S., Iacobucci, G., Lanni, F., Liu, H., Meloni, F., Meng, L., Miucci, A., Muenstermann, D., Nessi, M., Perić, I., Rimoldi, M., Ristic, B., Pinto, M. Vicente Barrero, Vossebeld, J., Weber, M., Wu, W., & Xu, L. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype. United States. doi:10.1088/1748-0221/11/07/P07019.
Benoit, M., de Mendizabal, J. Bilbao, Casse, G., Chen, H., Chen, K., Bello, F. A. Di, Ferrere, D., Golling, T., Gonzalez-Sevilla, S., Iacobucci, G., Lanni, F., Liu, H., Meloni, F., Meng, L., Miucci, A., Muenstermann, D., Nessi, M., Perić, I., Rimoldi, M., Ristic, B., Pinto, M. Vicente Barrero, Vossebeld, J., Weber, M., Wu, W., and Xu, L. 2016. "Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype". United States. doi:10.1088/1748-0221/11/07/P07019. https://www.osti.gov/servlets/purl/1344241.
@article{osti_1344241,
title = {Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype},
author = {Benoit, M. and de Mendizabal, J. Bilbao and Casse, G. and Chen, H. and Chen, K. and Bello, F. A. Di and Ferrere, D. and Golling, T. and Gonzalez-Sevilla, S. and Iacobucci, G. and Lanni, F. and Liu, H. and Meloni, F. and Meng, L. and Miucci, A. and Muenstermann, D. and Nessi, M. and Perić, I. and Rimoldi, M. and Ristic, B. and Pinto, M. Vicente Barrero and Vossebeld, J. and Weber, M. and Wu, W. and Xu, L.},
abstractNote = {We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.},
doi = {10.1088/1748-0221/11/07/P07019},
journal = {Journal of Instrumentation},
number = 07,
volume = 11,
place = {United States},
year = 2016,
month = 7
}

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