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Title: Emitter Choice for Epitaxial CdTe Solar Cells

Abstract

High-quality epitaxial CdTe layers with low defect density and high carrier concentration have been demonstrated by several research groups. Nevertheless, one primary challenge for high-performance epitaxial CdTe solar cells is how to choose a suitable emitter partner for the junction formation. The numerical simulations show that a type I heterojunction with small conduction band offset (0.1 eV = ..delta..Ec = 0.3 eV) is necessary to maintain a good cell efficiency even with large interface recombination. Otherwise, a small 'cliff' can assist interface recombination causing smaller Voc, and a large 'spike' (..delta..Ec = 0.4 eV) can impede the photo current and lead to a reduction of JSC and FF. Among the three possible emitters, CdS, CdMgTe, and MgZnO, CdMgTe (with ~30% Mg) and MgZnO (with ~ 20% Mg) are likely to be a better choice since their type-I junction can tolerate a larger density of interface defects.

Authors:
; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S), SunShot Initiative
OSTI Identifier:
1344214
Report Number(s):
NREL/CP-5K00-67984
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 5-10 June 2016, Portland, Oregon
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; solar cells; emitter; heterojunction; CdTe

Citation Formats

Song, Tao, Kanevce, Ana, and Sites, James R. Emitter Choice for Epitaxial CdTe Solar Cells. United States: N. p., 2016. Web. doi:10.1109/PVSC.2016.7749971.
Song, Tao, Kanevce, Ana, & Sites, James R. Emitter Choice for Epitaxial CdTe Solar Cells. United States. https://doi.org/10.1109/PVSC.2016.7749971
Song, Tao, Kanevce, Ana, and Sites, James R. Mon . "Emitter Choice for Epitaxial CdTe Solar Cells". United States. https://doi.org/10.1109/PVSC.2016.7749971.
@article{osti_1344214,
title = {Emitter Choice for Epitaxial CdTe Solar Cells},
author = {Song, Tao and Kanevce, Ana and Sites, James R.},
abstractNote = {High-quality epitaxial CdTe layers with low defect density and high carrier concentration have been demonstrated by several research groups. Nevertheless, one primary challenge for high-performance epitaxial CdTe solar cells is how to choose a suitable emitter partner for the junction formation. The numerical simulations show that a type I heterojunction with small conduction band offset (0.1 eV = ..delta..Ec = 0.3 eV) is necessary to maintain a good cell efficiency even with large interface recombination. Otherwise, a small 'cliff' can assist interface recombination causing smaller Voc, and a large 'spike' (..delta..Ec = 0.4 eV) can impede the photo current and lead to a reduction of JSC and FF. Among the three possible emitters, CdS, CdMgTe, and MgZnO, CdMgTe (with ~30% Mg) and MgZnO (with ~ 20% Mg) are likely to be a better choice since their type-I junction can tolerate a larger density of interface defects.},
doi = {10.1109/PVSC.2016.7749971},
url = {https://www.osti.gov/biblio/1344214}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {11}
}

Conference:
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