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Title: Semiconductor structure and recess formation etch technique

Abstract

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

Inventors:
; ;
Publication Date:
Research Org.:
Massachusetts Institute of Technology, Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1343744
Patent Number(s):
9,570,600
Application Number:
14/442,546
Assignee:
Massachusetts Institute of Technology ARPA-E
DOE Contract Number:
AR0000123
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Nov 15
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lu, Bin, Sun, Min, and Palacios, Tomas Apostol. Semiconductor structure and recess formation etch technique. United States: N. p., 2017. Web.
Lu, Bin, Sun, Min, & Palacios, Tomas Apostol. Semiconductor structure and recess formation etch technique. United States.
Lu, Bin, Sun, Min, and Palacios, Tomas Apostol. Tue . "Semiconductor structure and recess formation etch technique". United States. doi:. https://www.osti.gov/servlets/purl/1343744.
@article{osti_1343744,
title = {Semiconductor structure and recess formation etch technique},
author = {Lu, Bin and Sun, Min and Palacios, Tomas Apostol},
abstractNote = {A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 14 00:00:00 EST 2017},
month = {Tue Feb 14 00:00:00 EST 2017}
}

Patent:

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