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Title: Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells

Abstract

We report on voltage-bias annealing (VBA) experiments performed on CIGS and CZTSe solar cells. In these experiments, completed devices were annealed at moderate temperatures and subsequently quenched with continuously applied voltage bias. These treatments resulted in substantial reversible changes in device characteristics. Photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density from ~1014 cm-3 to ~1017 cm-3. In the CZTSe device, open-circuit voltage varied from 289 meV to 446 meV, caused by an approximately factor of fifty change in the CZTSe hole density. We interpret these findings in terms of reversible changes to the metastable point-defect populations that control key properties in these materials. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.

Authors:
; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1343674
Report Number(s):
NREL/CP-5K00-65789
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 5-10 June 2016, Portland, Oregon
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CIGS; CZTS; CZTSe; point defects; photovoltaic cells; metastabilities; detailed balance; microscopic reversibility

Citation Formats

Harvey, Steven P., Johnston, Steve, and Teeter, Glenn. Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells. United States: N. p., 2016. Web. doi:10.1109/PVSC.2016.7750018.
Harvey, Steven P., Johnston, Steve, & Teeter, Glenn. Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells. United States. doi:10.1109/PVSC.2016.7750018.
Harvey, Steven P., Johnston, Steve, and Teeter, Glenn. Mon . "Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells". United States. doi:10.1109/PVSC.2016.7750018.
@article{osti_1343674,
title = {Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells},
author = {Harvey, Steven P. and Johnston, Steve and Teeter, Glenn},
abstractNote = {We report on voltage-bias annealing (VBA) experiments performed on CIGS and CZTSe solar cells. In these experiments, completed devices were annealed at moderate temperatures and subsequently quenched with continuously applied voltage bias. These treatments resulted in substantial reversible changes in device characteristics. Photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density from ~1014 cm-3 to ~1017 cm-3. In the CZTSe device, open-circuit voltage varied from 289 meV to 446 meV, caused by an approximately factor of fifty change in the CZTSe hole density. We interpret these findings in terms of reversible changes to the metastable point-defect populations that control key properties in these materials. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.},
doi = {10.1109/PVSC.2016.7750018},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {11}
}

Conference:
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