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Title: Method of manufacturing a hybrid emitter all back contact solar cell

Abstract

A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.

Inventors:
;
Publication Date:
Research Org.:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1343277
Patent Number(s):
9,564,551
Application Number:
15/067,960
Assignee:
SunPower Corporation GFO
DOE Contract Number:
FC36-07GO17043
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Mar 11
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats

Loscutoff, Paul, and Rim, Seung. Method of manufacturing a hybrid emitter all back contact solar cell. United States: N. p., 2017. Web.
Loscutoff, Paul, & Rim, Seung. Method of manufacturing a hybrid emitter all back contact solar cell. United States.
Loscutoff, Paul, and Rim, Seung. Tue . "Method of manufacturing a hybrid emitter all back contact solar cell". United States. doi:. https://www.osti.gov/servlets/purl/1343277.
@article{osti_1343277,
title = {Method of manufacturing a hybrid emitter all back contact solar cell},
author = {Loscutoff, Paul and Rim, Seung},
abstractNote = {A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 07 00:00:00 EST 2017},
month = {Tue Feb 07 00:00:00 EST 2017}
}

Patent:

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  • An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.
  • A silicon solar energy cell is described having a diffusant junction extending inwardly from one surface, an aluminum-silicon junction of the opposite polarity extending inwardly from the other surface, and a film of aluminum-oxygen-diffusant formed over the aluminum-silicon junction. The structure is formed by diffusing an unprotected wafer, coating the diffusant glass so formed on one side of the wafer with aluminum, and heating the wafer.
  • Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.
  • Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.
  • Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.