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Title: Current understanding of structure-processing-property relationships in BaTiO 3-Bi( M)O 3 dielectrics

Abstract

Here, as part of a continued push for high permittivity dielectrics suitable for use at elevated operating temperatures and/or large electric fields, modifications of BaTiO 3 with Bi( M)O 3, where M represents a net-trivalent B-site occupied by one or more species, have received a great deal of recent attention. Materials in this composition family exhibit weakly coupled relaxor behavior that is not only remarkably stable at high temperatures and under large electric fields, but is also quite similar across various identities of M. Moderate levels of Bi content (as much as 50 mol%) appear to be crucial to the stability of the dielectric response. In addition, the presence of significant Bi reduces the processing temperatures required for densification and increases the required oxygen content in processing atmospheres relative to traditional X7R-type BaTiO 3-based dielectrics. Although detailed understanding of the structure–processing–property relationships in this class of materials is still in its infancy, this article reviews the current state of understanding of the mechanisms underlying the high and stable values of both relative permittivity and resistivity that are characteristic of BaTiO 3-Bi( M)O 3 dielectrics as well as the processing challenges and opportunities associated with these materials.

Authors:
 [1];  [2];  [3];  [4];  [5];  [6];  [7];  [2];  [3];  [1]
  1. Colorado School of Mines, Golden, CO (United States)
  2. Oregon State Univ., Corvallis, OR (United States)
  3. North Carolina State Univ., Raleigh, NC (United States)
  4. (ORNL), Oak Ridge, TN (United States)
  5. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  6. Chulalongkorn Univ., Bangkok (Thailand)
  7. Univ. of Sheffield, Sheffield (United Kingdom)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Electricity Delivery and Energy Reliability (OE)
OSTI Identifier:
1342707
Alternate Identifier(s):
OSTI ID: 1401236
Grant/Contract Number:  
AC05-00OR22725; AC02-06CH11357; AC52-06NA25396
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of the American Ceramic Society
Additional Journal Information:
Journal Volume: 99; Journal Issue: 9; Journal ID: ISSN 0002-7820
Publisher:
American Ceramic Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; perovskites; multilayer capacitor; barium titanate; dielectric; materials/properties; relaxors

Citation Formats

Beuerlein, Michaela A., Kumar, Nitish, Usher, Tedi -Marie, Oak Ridge National Lab., Brown-Shaklee, Harlan James, Raengthon, Natthaphon, Reaney, Ian M., Cann, David P., Jones, Jacob L., and Brennecka, Geoff L.. Current understanding of structure-processing-property relationships in BaTiO3-Bi(M)O3 dielectrics. United States: N. p., 2016. Web. doi:10.1111/jace.14472.
Beuerlein, Michaela A., Kumar, Nitish, Usher, Tedi -Marie, Oak Ridge National Lab., Brown-Shaklee, Harlan James, Raengthon, Natthaphon, Reaney, Ian M., Cann, David P., Jones, Jacob L., & Brennecka, Geoff L.. Current understanding of structure-processing-property relationships in BaTiO3-Bi(M)O3 dielectrics. United States. doi:10.1111/jace.14472.
Beuerlein, Michaela A., Kumar, Nitish, Usher, Tedi -Marie, Oak Ridge National Lab., Brown-Shaklee, Harlan James, Raengthon, Natthaphon, Reaney, Ian M., Cann, David P., Jones, Jacob L., and Brennecka, Geoff L.. Thu . "Current understanding of structure-processing-property relationships in BaTiO3-Bi(M)O3 dielectrics". United States. doi:10.1111/jace.14472. https://www.osti.gov/servlets/purl/1342707.
@article{osti_1342707,
title = {Current understanding of structure-processing-property relationships in BaTiO3-Bi(M)O3 dielectrics},
author = {Beuerlein, Michaela A. and Kumar, Nitish and Usher, Tedi -Marie and Oak Ridge National Lab. and Brown-Shaklee, Harlan James and Raengthon, Natthaphon and Reaney, Ian M. and Cann, David P. and Jones, Jacob L. and Brennecka, Geoff L.},
abstractNote = {Here, as part of a continued push for high permittivity dielectrics suitable for use at elevated operating temperatures and/or large electric fields, modifications of BaTiO3 with Bi(M)O3, where M represents a net-trivalent B-site occupied by one or more species, have received a great deal of recent attention. Materials in this composition family exhibit weakly coupled relaxor behavior that is not only remarkably stable at high temperatures and under large electric fields, but is also quite similar across various identities of M. Moderate levels of Bi content (as much as 50 mol%) appear to be crucial to the stability of the dielectric response. In addition, the presence of significant Bi reduces the processing temperatures required for densification and increases the required oxygen content in processing atmospheres relative to traditional X7R-type BaTiO3-based dielectrics. Although detailed understanding of the structure–processing–property relationships in this class of materials is still in its infancy, this article reviews the current state of understanding of the mechanisms underlying the high and stable values of both relative permittivity and resistivity that are characteristic of BaTiO3-Bi(M)O3 dielectrics as well as the processing challenges and opportunities associated with these materials.},
doi = {10.1111/jace.14472},
journal = {Journal of the American Ceramic Society},
number = 9,
volume = 99,
place = {United States},
year = {Thu Sep 01 00:00:00 EDT 2016},
month = {Thu Sep 01 00:00:00 EDT 2016}
}

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