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Title: Natural off-stoichiometry causes carrier doping in half-Heusler filled tetrahedral structures

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1342611
Grant/Contract Number:  
FG02-13ER46959; AC02-05CH11231
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 8; Related Information: CHORUS Timestamp: 2017-02-06 11:58:56; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Yu, Yonggang G., Zhang, Xiuwen, and Zunger, Alex. Natural off-stoichiometry causes carrier doping in half-Heusler filled tetrahedral structures. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.085201.
Yu, Yonggang G., Zhang, Xiuwen, & Zunger, Alex. Natural off-stoichiometry causes carrier doping in half-Heusler filled tetrahedral structures. United States. doi:10.1103/PhysRevB.95.085201.
Yu, Yonggang G., Zhang, Xiuwen, and Zunger, Alex. Fri . "Natural off-stoichiometry causes carrier doping in half-Heusler filled tetrahedral structures". United States. doi:10.1103/PhysRevB.95.085201.
@article{osti_1342611,
title = {Natural off-stoichiometry causes carrier doping in half-Heusler filled tetrahedral structures},
author = {Yu, Yonggang G. and Zhang, Xiuwen and Zunger, Alex},
abstractNote = {},
doi = {10.1103/PhysRevB.95.085201},
journal = {Physical Review B},
number = 8,
volume = 95,
place = {United States},
year = {Fri Feb 03 00:00:00 EST 2017},
month = {Fri Feb 03 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.95.085201

Citation Metrics:
Cited by: 6 works
Citation information provided by
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