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Title: Two-dimensional topological crystalline quantum spin Hall effect in transition metal intercalated compounds

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1342444
Grant/Contract Number:
FG02-96ER45579; AC02-05CH11231
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 8; Related Information: CHORUS Timestamp: 2017-02-03 09:00:54; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Zhou, Jian, and Jena, Puru. Two-dimensional topological crystalline quantum spin Hall effect in transition metal intercalated compounds. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.081102.
Zhou, Jian, & Jena, Puru. Two-dimensional topological crystalline quantum spin Hall effect in transition metal intercalated compounds. United States. doi:10.1103/PhysRevB.95.081102.
Zhou, Jian, and Jena, Puru. Wed . "Two-dimensional topological crystalline quantum spin Hall effect in transition metal intercalated compounds". United States. doi:10.1103/PhysRevB.95.081102.
@article{osti_1342444,
title = {Two-dimensional topological crystalline quantum spin Hall effect in transition metal intercalated compounds},
author = {Zhou, Jian and Jena, Puru},
abstractNote = {},
doi = {10.1103/PhysRevB.95.081102},
journal = {Physical Review B},
number = 8,
volume = 95,
place = {United States},
year = {Wed Feb 01 00:00:00 EST 2017},
month = {Wed Feb 01 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.95.081102

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  • Motivated by the growth of superconducting atomic hexagonal Ga layers on GaN surface we have calculated the electronic properties of Hf intercalated honeycomb Ga layers using first-principles theory. In contrast to the hexagonal Ga layers where substrate is necessary for their stability, we find the above structure to be dynamically stable in its freestanding form with small formation energy. In particular, six Dirac cones composed of Hf-d{sub xy}/d{sub x2-y2} orbitals are observed in the first Brillouin zone, slightly below the Fermi energy. Spin-orbit coupling opens a large band gap of 177 meV on these Dirac cones. By calculating its mirror Chernmore » number, we demonstrate that this band gap is topologically nontrivial and protected by mirror symmetry. Such mirror symmetry protected band gaps are rare in hexagonal lattice. A large topological crystalline quantum spin Hall conductance σ{sub SH} ∼ −4 e{sup 2}/h is also revealed. Moreover, electron-phonon coupling calculations reveal that this material is superconducting with a transition temperature T{sub c} = 2.4 K, mainly contributed by Ga out-of-plane vibrations. Our results provide a route toward manipulating quantum spin Hall and superconducting behaviors in a single material which helps to realize Majorana fermions and topological superconductors.« less
  • Cited by 1
  • We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride-cadmium telluride semiconductor quantum wells. When the thickness of the quantum well is varied, the electronic state changes from a normal to an 'inverted' type at a critical thickness d{sub c}. We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss methods for experimental detection of the QSH effect.
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  • We propose models of two-dimensional paramagnetic semiconductors where the intrinsic spin Hall effect is exactly quantized in integer units of a topological charge. The model describes a topological insulator in the bulk and a 'holographic metal' at the edge, where the number of extended edge states crossing the Fermi level is dictated by (exactly equal to) the bulk topological charge. We also demonstrate the spin Hall effect explicitly in terms of the spin accumulation caused by the adiabatic flux insertion.