Tuning the electronic and the crystalline structure of LaBi by pressure: From extreme magnetoresistance to superconductivity

Tafti, F. F.; Torikachvili, M. S.; Stillwell, R. L.; Baer, B.; Stavrou, E.; Weir, S. T.; Vohra, Y. K.; Yang, H. -Y.; McDonnell, E. F.; Kushwaha, S. K.; Gibson, Q. D.; Cava, R. J.; Jeffries, J. R.

doi:10.1103/physRevB.95.014507

Title: Tuning the electronic and the crystalline structure of LaBi by pressure: From extreme magnetoresistance to superconductivity

Journal Article · Sun Jan 01 00:00:00 EST 2017 · Physical Review B

DOI:https://doi.org/10.1103/physRevB.95.014507· OSTI ID:1342243

Tafti, F. F.; Torikachvili, M. S.; Stillwell, R. L.; Baer, B.; Stavrou, E.; Weir, S. T.; Vohra, Y. K.; Yang, H. -Y.; McDonnell, E. F.; Kushwaha, S. K.; Gibson, Q. D.; Cava, R. J.; Jeffries, J. R.

Extreme magnetoresistance (XMR) in topological semimetals is a recent discovery which attracts attention due to its robust appearance in a growing number of materials. To search for a relation between XMR and superconductivity, we study the effect of pressure on LaBi. By increasing pressure, we observe the disappearance of XMR followed by the appearance of superconductivity at P ≈ 3.5 GPa. We find a region of coexistence between superconductivity and XMR in LaBi in contrast to other superconducting XMR materials. The suppression of XMR is correlated with increasing zero-field resistance instead of decreasing in-field resistance. At higher pressures, P ≈ 11 GPa, we find a structural transition from the face-centered cubic lattice to a primitive tetragonal lattice, in agreement with theoretical predictions. The relationship between extreme magnetoresistance, superconductivity, and structural transition in LaBi is discussed.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)

OSTI ID:: 1342243

Journal Information:: Physical Review B, Vol. 95, Issue 1; ISSN 2469-9950

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: ENGLISH

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