High temperature emittance of silicon carbide based materials. Volume 1. High temperature normal spectral emittance of silicon carbide based materials. Volume 2. Effects of heat treatments on the emittance of silicon carbide based materials. Topical report, June 1, 1989-December 31, 1993
The objective of volume 1 of this project was to determine the normal, spectral emittance of alpha-SiC (Hexoloy SA) and TiB2 toughened SiC (Hexoloy ST) in the mid-infrared at elevated temperatures. A two part literature survey is presented. The first part reviews the instrumentation required in emittance measurement techniques while the second part deals with the different techniques of measurement. A high-temperature emissometer based on the integral blackbody emission technique was designed, manufactured and assembled. The surface morphology and composition of the materials were characterized by scanning electron microscope and X-ray diffraction techniques, respectively.