Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

Althammer, Matthias; Vikam Singh, Amit; Keshavarz, Sahar; Kenan Yurtisigi, Mehmet; Mishra, Rohan; Borisevich, Albina Y.; LeClair, Patrick; Gupta, Arunava

doi:10.1063/1.4972103

Title: Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

Journal Article · Fri Dec 16 00:00:00 EST 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4972103· OSTI ID:1340473

Althammer, Matthias ^[1]; Vikam Singh, Amit ^[2]; Keshavarz, Sahar ^[3]; Kenan Yurtisigi, Mehmet ^[3]; Mishra, Rohan ^[4]; Borisevich, Albina Y. ^[5]; LeClair, Patrick ^[3]; Gupta, Arunava ^[2]

Univ. of Alabama, Tuscaloosa, AL (United States). MINT Center
Univ. of Alabama, Tuscaloosa, AL (United States). MINT Center. Dept. of Chemistry and Chemical Engineering
Univ. of Alabama, Tuscaloosa, AL (United States). MINT Center. Dept. of Physics and Astronomy
Washington Univ., St. Louis, MO (United States). Dept. of Mechanical Engineering and Materials Science
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Sciences and Technology Division

In this paper, we experimentally investigate the structural, magnetic, and electrical transport properties of La_0.67 Sr_0.33MnO₃ based magnetic tunnel junctions with a SrSnO₃ barrier. Our results show that despite the high density of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance (TMR) is comparable to tunnel junctions with a better lattice matched SrTiO₃ barrier, reaching values of up to 350% at T = 5K. Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T > 200K. Finally, our results suggest that by employing a better lattice matched ferromagnetic electrode, and thus reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Alabama, Tuscaloosa, AL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Contributing Organization:: Bavarian Academy of Sciences and Humanities (BADW), Garching (Germany); Washington Univ., St. Louis, MO (United States)

Grant/Contract Number:: AC05-00OR22725; 1509875

OSTI ID:: 1340473

Journal Information:: Journal of Applied Physics, Vol. 120, Issue 23; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 1 work

Citation information provided by
Web of Science

References (25)

The phenomena of spin-filter tunnelling Moodera, Jagadeesh S.; Santos, Tiffany S.; Nagahama, Taro Journal of Physics: Condensed Matter, Vol. 19, Issue 16 https://doi.org/10.1088/0953-8984/19/16/165202	journal	April 2007
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers Parkin, Stuart S. P.; Kaiser, Christian; Panchula, Alex Nature Materials, Vol. 3, Issue 12 https://doi.org/10.1038/nmat1256	journal	October 2004
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions Yuasa, Shinji; Nagahama, Taro; Fukushima, Akio Nature Materials, Vol. 3, Issue 12 https://doi.org/10.1038/nmat1257	journal	October 2004
Misfit strain accommodation in epitaxial $A B O_{3}$ perovskites: Lattice rotations and lattice modulations Vailionis, A.; Boschker, H.; Siemons, W. Physical Review B, Vol. 83, Issue 6 https://doi.org/10.1103/PhysRevB.83.064101	journal	February 2011
Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction Kanai, S.; Yamanouchi, M.; Ikeda, S. Applied Physics Letters, Vol. 101, Issue 12 https://doi.org/10.1063/1.4753816	journal	September 2012
Large magnetotunneling effect at low magnetic fields in micrometer-scale epitaxial ${La}_{0.67}$ ${Sr}_{0.33}$ Mn $O_{3}$ tunnel junctions Lu, Yu; Li, X. W.; Gong, G. Q. Physical Review B, Vol. 54, Issue 12 https://doi.org/10.1103/PhysRevB.54.R8357	journal	September 1996
Photoluminescence and photocatalytic properties of SrSnO3 perovskite Zhang, W. F.; Tang, Junwang; Ye, Jinhua Chemical Physics Letters, Vol. 418, Issue 1-3 https://doi.org/10.1016/j.cplett.2005.10.122	journal	January 2006
Observation of large low‐field magnetoresistance in trilayer perpendicular transport devices made using doped manganate perovskites Sun, J. Z.; Gallagher, W. J.; Duncombe, P. R. Applied Physics Letters, Vol. 69, Issue 21 https://doi.org/10.1063/1.118031	journal	November 1996
Data Storage: Review of Heusler Compounds Bai, Zhaoqiang; Shen, Lei; Han, Guchang SPIN, Vol. 02, Issue 04 https://doi.org/10.1142/S201032471230006X	journal	December 2012
Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature Ikeda, S.; Hayakawa, J.; Ashizawa, Y. Applied Physics Letters, Vol. 93, Issue 8 https://doi.org/10.1063/1.2976435	journal	August 2008
Nanoscale Multiphase Separation at ${La}_{2 / 3} {Ca}_{1 / 3} {MnO}_{3} / {SrTiO}_{3}$ Interfaces Bibes, M.; Balcells, Ll.; Valencia, S. Physical Review Letters, Vol. 87, Issue 6 https://doi.org/10.1103/PhysRevLett.87.067210	journal	July 2001
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments Bowen, M.; Bibes, M.; Barthélémy, A. Applied Physics Letters, Vol. 82, Issue 2 https://doi.org/10.1063/1.1534619	journal	January 2003
Thickness-dependent magnetotransport in ultrathin manganite films Sun, J. Z.; Abraham, D. W.; Rao, R. A. Applied Physics Letters, Vol. 74, Issue 20 https://doi.org/10.1063/1.124050	journal	May 1999
Crystal structure of double oxides of the perovskite type Megaw, Helen D. Proceedings of the Physical Society, Vol. 58, Issue 2 https://doi.org/10.1088/0959-5309/58/2/301	journal	March 1946
Tunneling between ferromagnetic films Julliere, M. Physics Letters A, Vol. 54, Issue 3 https://doi.org/10.1016/0375-9601(75)90174-7	journal	September 1975
Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film Simmons, John G. Journal of Applied Physics, Vol. 34, Issue 6 https://doi.org/10.1063/1.1702682	journal	June 1963
Quantitative measurement of displacement and strain fields from HREM micrographs Hÿtch, M. J.; Snoeck, E.; Kilaas, R. Ultramicroscopy, Vol. 74, Issue 3, p. 131-146 https://doi.org/10.1016/S0304-3991(98)00035-7	journal	August 1998
Large magnetoresistance in bcc $Co ∕ Mg O ∕ Co$ and $Fe Co ∕ Mg O ∕ Fe Co$ tunnel junctions Zhang, X. -G.; Butler, W. H. Physical Review B, Vol. 70, Issue 17 https://doi.org/10.1103/PhysRevB.70.172407	journal	November 2004
Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy Werner, R.; Petrov, A. Yu.; Miño, L. Alvarez Applied Physics Letters, Vol. 98, Issue 16 https://doi.org/10.1063/1.3581885	journal	April 2011
Ferroelectric tunnel junctions for information storage and processing Garcia, Vincent; Bibes, Manuel Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5289	journal	July 2014
Structure and band gap tuning of transparent (Ba _1−x Sr _x )SnO ₃ thin films epitaxially grown on MgO substrates Liu, Qinzhuang; Li, Bing; Liu, Jianjun EPL (Europhysics Letters), Vol. 98, Issue 4 https://doi.org/10.1209/0295-5075/98/47010	journal	May 2012
Bulk electronic structure of SrTiO3: Experiment and theory van Benthem, K.; Elsässer, C.; French, R. H. Journal of Applied Physics, Vol. 90, Issue 12 https://doi.org/10.1063/1.1415766	journal	December 2001
Low B2 crystallization temperature and high tunnel magnetoresistance in magnetic tunnel junctions Ebke, D.; Thomas, P.; Schebaum, O. Journal of Magnetism and Magnetic Materials, Vol. 322, Issue 8 https://doi.org/10.1016/j.jmmm.2009.12.003	journal	April 2010
Electric-field-assisted switching in magnetic tunnel junctions Wang, Wei-Gang; Li, Mingen; Hageman, Stephen Nature Materials, Vol. 11, Issue 1 https://doi.org/10.1038/nmat3171	journal	November 2011
Temperature dependence of the interfacial spin polarization of ${La}_{2 / 3} {Sr}_{1 / 3} {MnO}_{3}$ Garcia, V.; Bibes, M.; Barthélémy, A. Physical Review B, Vol. 69, Issue 5 https://doi.org/10.1103/PhysRevB.69.052403	journal	February 2004

Similar Records

Large tunneling magnetoresistance in octahedral Fe{sub 3}O{sub 4} nanoparticles

Journal Article · Sun May 15 00:00:00 EDT 2016 · AIP Advances · OSTI ID:1340473

Mitra, Arijit; Barick, Barun; Sharma, H.; +2 more

Structure and chemistry of manganite based tunnel junctions

Journal Article · Fri Jun 01 00:00:00 EDT 2001 · Journal of Applied Physics · OSTI ID:1340473

Ozkaya, D; Petford-Long, A K; Jo, Moon-Ho; +1 more

Effect of annealing on the temperature dependence of inelastic tunneling contributions vis-à-vis tunneling magnetoresistance and barrier parameters in CoFe/MgO/NiFe magnetic tunnel junctions

Journal Article · Fri Feb 28 00:00:00 EST 2014 · Journal of Applied Physics · OSTI ID:1340473

Bhusan Singh, Braj; Chaudhary, Sujeet

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
magnetic tunnel junctions
electrodes
magnetoresistance
multilayers
magnetic fields

Title: Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

Citation Formats

References (25)

Similar Records

Related Subjects