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Title: Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM

Abstract

In this paper, we use cross-sectional scanning tunneling microscopy (STM) to reconstruct the monolayer-by-monolayer composition profile across a representative subset of MBE-grown InAs/InAsSb superlattice layers and find that antimony segregation frustrates the intended compositional discontinuities across both antimonide-on-arsenide and arsenide-on-antimonide heterojunctions. Graded, rather than abrupt, interfaces are formed in either case. We likewise find that the incorporated antimony per superlattice period varies measurably from beginning to end of the multilayer stack. Finally, although the intended antimony discontinuities predict significant discrepancies with respect to the experimentally observed high-resolution x-ray diffraction spectrum, dynamical simulations based on the STM-derived profiles provide an excellent quantitative match to all important aspects of the x-ray data.

Authors:
 [1];  [1];  [1];  [1];  [2];  [2];  [2];  [2]
  1. Texas A & M Univ., College Station, TX (United States). Dept. of Physics and Astronomy
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Texas A & M Univ., College Station, TX (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); US Army Research Office (ARO)
OSTI Identifier:
1340250
Report Number(s):
SAND2014-19677J
Journal ID: ISSN 0022-0248; PII: S0022024815001530
Grant/Contract Number:  
AC04-94AL85000; W911NF-14-1-0645
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 425; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; High resolution x-ray diffraction; Scanning tunneling microscopy; Segregation; Molecular beam epitaxy; Superlattices; Semiconducting III–V materials

Citation Formats

Wood, M. R., Kanedy, K., Lopez, F., Weimer, M., Klem, J. F., Hawkins, S. D., Shaner, E. A., and Kim, J. K.. Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM. United States: N. p., 2015. Web. doi:10.1016/j.jcrysgro.2015.02.063.
Wood, M. R., Kanedy, K., Lopez, F., Weimer, M., Klem, J. F., Hawkins, S. D., Shaner, E. A., & Kim, J. K.. Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM. United States. doi:10.1016/j.jcrysgro.2015.02.063.
Wood, M. R., Kanedy, K., Lopez, F., Weimer, M., Klem, J. F., Hawkins, S. D., Shaner, E. A., and Kim, J. K.. Mon . "Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM". United States. doi:10.1016/j.jcrysgro.2015.02.063. https://www.osti.gov/servlets/purl/1340250.
@article{osti_1340250,
title = {Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM},
author = {Wood, M. R. and Kanedy, K. and Lopez, F. and Weimer, M. and Klem, J. F. and Hawkins, S. D. and Shaner, E. A. and Kim, J. K.},
abstractNote = {In this paper, we use cross-sectional scanning tunneling microscopy (STM) to reconstruct the monolayer-by-monolayer composition profile across a representative subset of MBE-grown InAs/InAsSb superlattice layers and find that antimony segregation frustrates the intended compositional discontinuities across both antimonide-on-arsenide and arsenide-on-antimonide heterojunctions. Graded, rather than abrupt, interfaces are formed in either case. We likewise find that the incorporated antimony per superlattice period varies measurably from beginning to end of the multilayer stack. Finally, although the intended antimony discontinuities predict significant discrepancies with respect to the experimentally observed high-resolution x-ray diffraction spectrum, dynamical simulations based on the STM-derived profiles provide an excellent quantitative match to all important aspects of the x-ray data.},
doi = {10.1016/j.jcrysgro.2015.02.063},
journal = {Journal of Crystal Growth},
number = ,
volume = 425,
place = {United States},
year = {Mon Feb 23 00:00:00 EST 2015},
month = {Mon Feb 23 00:00:00 EST 2015}
}

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