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Title: Landau level splitting in nitrogen-seeded epitaxial graphene

Abstract

We present a new form of semiconducting graphene grown on C-face silicon carbide, SiC(0001), seeded with a sub-monolayer of nitrogen. This graphene exhibits a gap of 0.3-0.7 eV from the Fermi level to the valence band dependent on lm thickness as measured via angle resolved photo-emission spectroscopy (ARPES). Scanning tunneling microscopy (STM) images imply that the bandgap may be the result of strain-induced confinement. STM indicates that much of the graphene consists of wide at hexagonal plateaus, 8-20 nm2 on average, surrounded by both smooth and disordered folds of length scales from 0.5-2 nm tall, 1-4 nm thick, and 1-20 nm long. The remainder of the surface is covered in smooth or disordered ripples and folds intermixed. Scanning tunneling spectroscopy (STS) measurements on all features show peaks suggestive of Landau levels, and have been analyzed to give pseudo-magnetic field magnitudes. The magnetic lengths associated with these fields are less than the average plateau diameter but comparable to typical fold widths. We consider a growth process whereby the graphene grows pinned to the substrate by the interface nitrogen. The graphene experiences compressive strain as a result of both this pinning as well as competing thermal expansion forces between the substrate andmore » lm. As a result, graphene on nitrogen-seeded SiC has a more concentrated network of strained ripples and folds than seen on C-face SiC graphene without nitrogen.« less

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1340011
Alternate Identifier(s):
OSTI ID: 1334840
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Carbon
Additional Journal Information:
Journal Volume: 103; Journal Issue: C; Journal ID: ISSN 0008-6223
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Rothwell, S. L., Wang, F., Liu, G., Xu, C., Feldman, L. C., Conrad, E. H., Guisinger, N. P., and Cohen, P. I. Landau level splitting in nitrogen-seeded epitaxial graphene. United States: N. p., 2016. Web. doi:10.1016/j.carbon.2016.02.100.
Rothwell, S. L., Wang, F., Liu, G., Xu, C., Feldman, L. C., Conrad, E. H., Guisinger, N. P., & Cohen, P. I. Landau level splitting in nitrogen-seeded epitaxial graphene. United States. doi:10.1016/j.carbon.2016.02.100.
Rothwell, S. L., Wang, F., Liu, G., Xu, C., Feldman, L. C., Conrad, E. H., Guisinger, N. P., and Cohen, P. I. Fri . "Landau level splitting in nitrogen-seeded epitaxial graphene". United States. doi:10.1016/j.carbon.2016.02.100. https://www.osti.gov/servlets/purl/1340011.
@article{osti_1340011,
title = {Landau level splitting in nitrogen-seeded epitaxial graphene},
author = {Rothwell, S. L. and Wang, F. and Liu, G. and Xu, C. and Feldman, L. C. and Conrad, E. H. and Guisinger, N. P. and Cohen, P. I.},
abstractNote = {We present a new form of semiconducting graphene grown on C-face silicon carbide, SiC(0001), seeded with a sub-monolayer of nitrogen. This graphene exhibits a gap of 0.3-0.7 eV from the Fermi level to the valence band dependent on lm thickness as measured via angle resolved photo-emission spectroscopy (ARPES). Scanning tunneling microscopy (STM) images imply that the bandgap may be the result of strain-induced confinement. STM indicates that much of the graphene consists of wide at hexagonal plateaus, 8-20 nm2 on average, surrounded by both smooth and disordered folds of length scales from 0.5-2 nm tall, 1-4 nm thick, and 1-20 nm long. The remainder of the surface is covered in smooth or disordered ripples and folds intermixed. Scanning tunneling spectroscopy (STS) measurements on all features show peaks suggestive of Landau levels, and have been analyzed to give pseudo-magnetic field magnitudes. The magnetic lengths associated with these fields are less than the average plateau diameter but comparable to typical fold widths. We consider a growth process whereby the graphene grows pinned to the substrate by the interface nitrogen. The graphene experiences compressive strain as a result of both this pinning as well as competing thermal expansion forces between the substrate and lm. As a result, graphene on nitrogen-seeded SiC has a more concentrated network of strained ripples and folds than seen on C-face SiC graphene without nitrogen.},
doi = {10.1016/j.carbon.2016.02.100},
journal = {Carbon},
number = C,
volume = 103,
place = {United States},
year = {Fri Jul 01 00:00:00 EDT 2016},
month = {Fri Jul 01 00:00:00 EDT 2016}
}

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