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Title: Suppressing the spin relaxation of electrons in silicon

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1339770
Grant/Contract Number:
SC0014349
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 3; Related Information: CHORUS Timestamp: 2017-01-19 11:20:15; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Chalaev, Oleg, Song, Yang, and Dery, Hanan. Suppressing the spin relaxation of electrons in silicon. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.035204.
Chalaev, Oleg, Song, Yang, & Dery, Hanan. Suppressing the spin relaxation of electrons in silicon. United States. doi:10.1103/PhysRevB.95.035204.
Chalaev, Oleg, Song, Yang, and Dery, Hanan. Tue . "Suppressing the spin relaxation of electrons in silicon". United States. doi:10.1103/PhysRevB.95.035204.
@article{osti_1339770,
title = {Suppressing the spin relaxation of electrons in silicon},
author = {Chalaev, Oleg and Song, Yang and Dery, Hanan},
abstractNote = {},
doi = {10.1103/PhysRevB.95.035204},
journal = {Physical Review B},
number = 3,
volume = 95,
place = {United States},
year = {Tue Jan 17 00:00:00 EST 2017},
month = {Tue Jan 17 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.95.035204

Citation Metrics:
Cited by: 3works
Citation information provided by
Web of Science

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  • The recently discovered monolayer transition metal dichalcogenides (TMDCs) provide a fertile playground to explore new coupled spin–valley physics. Although robust spin and valley degrees of freedom are inferred from polarized photoluminescence (PL) experiments PL timescales are necessarily constrained by short-lived (3–100 ps) electron–hole recombination9, 10. Direct probes of spin/valley polarization dynamics of resident carriers in electron (or hole)-doped TMDCs, which may persist long after recombination ceases, are at an early stage. Here we directly measure the coupled spin–valley dynamics in electron-doped MoS 2 and WS 2 monolayers using optical Kerr spectroscopy, and reveal very long electron spin lifetimes, exceeding 3more » ns at 5 K (2-3 orders of magnitude longer than typical exciton recombination times). In contrast with conventional III–V or II–VI semiconductors, spin relaxation accelerates rapidly in small transverse magnetic fields. Supported by a model of coupled spin–valley dynamics, these results indicate a novel mechanism of itinerant electron spin dephasing in the rapidly fluctuating internal spin–orbit field in TMDCs, driven by fast inter-valley scattering. Additionally, a long-lived spin coherence is observed at lower energies, commensurate with localized states. These studies provide insight into the physics underpinning spin and valley dynamics of resident electrons in atomically thin TMDCs.« less
  • Selective and nonselective inversion NMR experiments were carried out to investigate the dynamics of Si exchange between silicate anions in alkaline silicate solutions. Rate coefficients for the Si exchange between monomer and dimer anions and between monomer, dimer, and cyclic trimer anions were determined as functions of alkali-metal cation size. The largest rate coefficient for Si exchange between monomer and dimer anions occurs for K{sup +}, whereas the largest rate coefficient for Si exchange between monomer, dimer, and cyclic trimer anions occurs for Na{sup +}. Cation size is also found to influence spin-lattice (T{sub 1}) and spin-spin relaxation (T{sub 2})more » times.« less
  • Electron spin resonance methods have been used to measure the temperature dependence of the spin-lattice relaxation time T/sub 1/ of dangling bond electrons in hydrogenated amorphous silicon and silicon carbide samples prepared by radio frequency sputtering. The T/sub 1/ measurements were made by a combination of continuous-wave absorption mode saturation and periodic adiabatic passage methods over the temperature range 100--400 K, yielding T/sup -1//sub 1/proportionalT/sup 2/ behavior consistent with relaxation by two-level systems.
  • Several possible mechanisms leading to spin transitions in the electron- nuclear spin system of an F-center electron and its neighboring nuclei were examined. Calculations show that the most probable transition is one in which the electron spin changes but the nuclear spin does not change and which results from the second-order perturbation of the spin-orbit coupling of the electron due to lattice vibrations. The spin-lattice relaxation time of the-F-center electrons in NaCl at 300 deg K was measured at 70, 2950, and 8300 gauss. The relaxation time was 2 x 10/sup -6/ second, independent of the magnetic field, this wasmore » in approximate agreement with the theory. (auth)« less