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Title: Suppressing the spin relaxation of electrons in silicon

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1339770
Grant/Contract Number:  
SC0014349
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 3; Related Information: CHORUS Timestamp: 2017-01-19 11:20:15; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Chalaev, Oleg, Song, Yang, and Dery, Hanan. Suppressing the spin relaxation of electrons in silicon. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.035204.
Chalaev, Oleg, Song, Yang, & Dery, Hanan. Suppressing the spin relaxation of electrons in silicon. United States. doi:10.1103/PhysRevB.95.035204.
Chalaev, Oleg, Song, Yang, and Dery, Hanan. Tue . "Suppressing the spin relaxation of electrons in silicon". United States. doi:10.1103/PhysRevB.95.035204.
@article{osti_1339770,
title = {Suppressing the spin relaxation of electrons in silicon},
author = {Chalaev, Oleg and Song, Yang and Dery, Hanan},
abstractNote = {},
doi = {10.1103/PhysRevB.95.035204},
journal = {Physical Review B},
number = 3,
volume = 95,
place = {United States},
year = {Tue Jan 17 00:00:00 EST 2017},
month = {Tue Jan 17 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.95.035204

Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

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