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Title: All 2D, high mobility, flexible, transparent thin film transistor

Abstract

A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.

Inventors:
; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1339546
Patent Number(s):
9,548,394
Application Number:
14/692,596
Assignee:
UChicago Argonne, LLC (Chicago, IL) ANL
DOE Contract Number:
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Apr 21
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Das, Saptarshi, Sumant, Anirudha V., and Roelofs, Andreas. All 2D, high mobility, flexible, transparent thin film transistor. United States: N. p., 2017. Web.
Das, Saptarshi, Sumant, Anirudha V., & Roelofs, Andreas. All 2D, high mobility, flexible, transparent thin film transistor. United States.
Das, Saptarshi, Sumant, Anirudha V., and Roelofs, Andreas. Tue . "All 2D, high mobility, flexible, transparent thin film transistor". United States. doi:. https://www.osti.gov/servlets/purl/1339546.
@article{osti_1339546,
title = {All 2D, high mobility, flexible, transparent thin film transistor},
author = {Das, Saptarshi and Sumant, Anirudha V. and Roelofs, Andreas},
abstractNote = {A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 17 00:00:00 EST 2017},
month = {Tue Jan 17 00:00:00 EST 2017}
}

Patent:

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  • A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations.A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.
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