All 2D, high mobility, flexible, transparent thin film transistor

Das, Saptarshi; Sumant, Anirudha V.; Roelofs, Andreas

Title: All 2D, high mobility, flexible, transparent thin film transistor

Patent · Tue Jan 17 00:00:00 EST 2017

OSTI ID:1339546

Das, Saptarshi; Sumant, Anirudha V.; Roelofs, Andreas

A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-06CH11357

Assignee:: UChicago Argonne, LLC (Chicago, IL)

Patent Number(s):: 9,548,394

Application Number:: 14/692,596

OSTI ID:: 1339546

Resource Relation:: Patent File Date: 2015 Apr 21

Country of Publication:: United States

Language:: English

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