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Title: Strategies for Wide Bandgap, Inexpensive Transistors for Controlling High-efficiency Systems

Abstract

Wide bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. However, today, they remain too costly relative to Si devices to gain ubiquitous adoption in many higher power applications. In 2014, ARPA-E launched a new research program entitled SWITCHES, that seeks to enable the development of high voltage (1200 V+), high current (100 A) single die power semiconductor devices that, upon ultimately reaching scale, have the potential to reach functional cost parity ($/A) with silicon power transistors while also offering breakthrough relative circuit performance (low losses, high switching frequencies, and high temperature operation).

Authors:
 [1]; ;
  1. Dept. of Energy (DOE), Washington DC (United States). Advanced Research Projects Agency-Energy (ARPA-E)
Publication Date:
Research Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1339430
Resource Type:
Conference
Resource Relation:
Conference: 2015 CS MANTECH Conference, Scottsdale, Arizona, 05/18/2015-05/21/2015
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Power Semiconductor Devices, Gallium Nitride (GaN), Silicon Carbide (SiC), Diamond, Bulk GaN Substrates

Citation Formats

Heidel, Timothy D., Henshall, David, and Gradzki, pawel. Strategies for Wide Bandgap, Inexpensive Transistors for Controlling High-efficiency Systems. United States: N. p., 2015. Web.
Heidel, Timothy D., Henshall, David, & Gradzki, pawel. Strategies for Wide Bandgap, Inexpensive Transistors for Controlling High-efficiency Systems. United States.
Heidel, Timothy D., Henshall, David, and Gradzki, pawel. Mon . "Strategies for Wide Bandgap, Inexpensive Transistors for Controlling High-efficiency Systems". United States.
@article{osti_1339430,
title = {Strategies for Wide Bandgap, Inexpensive Transistors for Controlling High-efficiency Systems},
author = {Heidel, Timothy D. and Henshall, David and Gradzki, pawel},
abstractNote = {Wide bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. However, today, they remain too costly relative to Si devices to gain ubiquitous adoption in many higher power applications. In 2014, ARPA-E launched a new research program entitled SWITCHES, that seeks to enable the development of high voltage (1200 V+), high current (100 A) single die power semiconductor devices that, upon ultimately reaching scale, have the potential to reach functional cost parity ($/A) with silicon power transistors while also offering breakthrough relative circuit performance (low losses, high switching frequencies, and high temperature operation).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}

Conference:
Other availability
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