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Title: Enhanced metallic properties of SrRuO 3 thin films via kinetically controlled pulsed laser epitaxy

Abstract

Metal electrodes are a universal element of all electronic devices. Conducting SrRuO 3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite substrates. However, when compared to SRO single crystals, SRO thin films have shown reduced conductivity and Curie temperatures (T C), which can lead to higher Joule heating and energy loss in the devices. In this paper, we report that high-quality SRO thin films can be synthesized by controlling the plume dynamics and growth rate of pulsed laser epitaxy (PLE) with real-time optical spectroscopic monitoring. The SRO thin films grown under the kinetically controlled conditions, down to ca. 16 nm in thickness, exhibit both enhanced conductivity and T C as compared to bulk values, due to their improved stoichiometry and a strain-mediated increase of the bandwidth of Ru 4d electrons. Finally, this result provides a direction for enhancing the physical properties of PLE-grown thin films and paves a way to improved device applications.

Authors:
 [1];  [2];  [2];  [3];  [1]; ORCiD logo [1];  [1];  [4];  [4];  [3];  [2]; ORCiD logo [5];  [1]
  1. Univ. of Kentucky, Lexington, KY (United States). Dept. of Physics and Astronomy
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  3. Korea Advanced Inst. of Science and Technology (KAIST), Daejeon (Korea, Republic of). Dept. of Physics
  4. The Ohio State Univ., Columbus, OH (United States). Dept. of Materials Science and Engineering
  5. Ewha Womans Univ., Seoul (Korea, Republic of). Dept. of Physics
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Kentucky, Lexington, KY (United States); Korea Advanced Inst. of Science and Technology (KAIST), Daejeon (Korea, Republic of)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF); National Research Foundation of Korea (NRF); Korea Inst. of Science and Technology Information (KISTI) (Korea, Republic of)
Contributing Org.:
Ewha Womans Univ., Seoul (Korea, Republic of); The Ohio State Univ., Columbus, OH (United States)
OSTI Identifier:
1339394
Alternate Identifier(s):
OSTI ID: 1420535
Grant/Contract Number:  
AC05-00OR22725; DMR-1454200; 2014R1A1A2057202; KSC-2014-C2-046
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 16; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; thin film growth; metallic thin films; single crystals; electrical resistivity; thin film thickness

Citation Formats

Thompson, J., Nichols, John A., Lee, Shinbuhm, Ryee, S., Gruenewald, J. H., Connell, J. G., Souri, M., Johnson, J. M., Hwang, J., Han, M. J., Lee, Ho Nyung, Kim, D. -W., and Seo, Sung Seok A. Enhanced metallic properties of SrRuO3 thin films via kinetically controlled pulsed laser epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4964882.
Thompson, J., Nichols, John A., Lee, Shinbuhm, Ryee, S., Gruenewald, J. H., Connell, J. G., Souri, M., Johnson, J. M., Hwang, J., Han, M. J., Lee, Ho Nyung, Kim, D. -W., & Seo, Sung Seok A. Enhanced metallic properties of SrRuO3 thin films via kinetically controlled pulsed laser epitaxy. United States. doi:10.1063/1.4964882.
Thompson, J., Nichols, John A., Lee, Shinbuhm, Ryee, S., Gruenewald, J. H., Connell, J. G., Souri, M., Johnson, J. M., Hwang, J., Han, M. J., Lee, Ho Nyung, Kim, D. -W., and Seo, Sung Seok A. Mon . "Enhanced metallic properties of SrRuO3 thin films via kinetically controlled pulsed laser epitaxy". United States. doi:10.1063/1.4964882. https://www.osti.gov/servlets/purl/1339394.
@article{osti_1339394,
title = {Enhanced metallic properties of SrRuO3 thin films via kinetically controlled pulsed laser epitaxy},
author = {Thompson, J. and Nichols, John A. and Lee, Shinbuhm and Ryee, S. and Gruenewald, J. H. and Connell, J. G. and Souri, M. and Johnson, J. M. and Hwang, J. and Han, M. J. and Lee, Ho Nyung and Kim, D. -W. and Seo, Sung Seok A.},
abstractNote = {Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite substrates. However, when compared to SRO single crystals, SRO thin films have shown reduced conductivity and Curie temperatures (TC), which can lead to higher Joule heating and energy loss in the devices. In this paper, we report that high-quality SRO thin films can be synthesized by controlling the plume dynamics and growth rate of pulsed laser epitaxy (PLE) with real-time optical spectroscopic monitoring. The SRO thin films grown under the kinetically controlled conditions, down to ca. 16 nm in thickness, exhibit both enhanced conductivity and TC as compared to bulk values, due to their improved stoichiometry and a strain-mediated increase of the bandwidth of Ru 4d electrons. Finally, this result provides a direction for enhancing the physical properties of PLE-grown thin films and paves a way to improved device applications.},
doi = {10.1063/1.4964882},
journal = {Applied Physics Letters},
number = 16,
volume = 109,
place = {United States},
year = {Mon Oct 17 00:00:00 EDT 2016},
month = {Mon Oct 17 00:00:00 EDT 2016}
}

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Works referenced in this record:

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
journal, July 2011

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