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Title: High pressure low temperature hot pressing method for producing a zirconium carbide ceramic

Abstract

A method for producing monolithic Zirconium Carbide (ZrC) is described. The method includes raising a pressure applied to a ZrC powder until a final pressure of greater than 40 MPa is reached; and raising a temperature of the ZrC powder until a final temperature of less than 2200.degree. C. is reached.

Inventors:
Publication Date:
Research Org.:
Bettis Atomic Power Laboratory (BAPL), West Mifflin, PA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1338934
Patent Number(s):
9,540,286
Application Number:
14/182,844
Assignee:
U.S. Department of Energy (Washington, DC) BAPL
DOE Contract Number:
AC11-98PN38206
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Feb 18
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Cockeram, Brian V. High pressure low temperature hot pressing method for producing a zirconium carbide ceramic. United States: N. p., 2017. Web.
Cockeram, Brian V. High pressure low temperature hot pressing method for producing a zirconium carbide ceramic. United States.
Cockeram, Brian V. Tue . "High pressure low temperature hot pressing method for producing a zirconium carbide ceramic". United States. doi:. https://www.osti.gov/servlets/purl/1338934.
@article{osti_1338934,
title = {High pressure low temperature hot pressing method for producing a zirconium carbide ceramic},
author = {Cockeram, Brian V.},
abstractNote = {A method for producing monolithic Zirconium Carbide (ZrC) is described. The method includes raising a pressure applied to a ZrC powder until a final pressure of greater than 40 MPa is reached; and raising a temperature of the ZrC powder until a final temperature of less than 2200.degree. C. is reached.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 10 00:00:00 EST 2017},
month = {Tue Jan 10 00:00:00 EST 2017}
}

Patent:

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