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Title: High bandgap III-V alloys for high efficiency optoelectronics

Patent ·
OSTI ID:1338904
; ;

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-08GO28308
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Number(s):
9,543,468
Application Number:
13/878,738
OSTI ID:
1338904
Resource Relation:
Patent File Date: 2011 Oct 12
Country of Publication:
United States
Language:
English

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