Improved scintillation detector performance via a method of enhanced layered coatings
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Increasing demand for better detection performance with a simultaneous reduction in size, weight and power consumption has motivated the use of compact semiconductors as photo-converters for many gamma-ray and neutron scintillators. The spectral response of devices such as silicon avalanche photodiodes (APDs) is poorly matched to many common high-performance scintillators. We have developed a generalized analytical method that utilizes an optical reference database to match scintillator luminescence to the excitation spectrum of high quantum efficiency semiconductor detectors. This is accomplished by the fabrication and application of a series of high quantum yield, short fluorescence lifetime, wavelengthshifting coatings. Furthermore, we show here a 22% increase in photoelectron collection and a 10% improvement in energy resolution when applying a layered coating to an APD-coupled, cerium-doped, yttrium oxyorthosilicate (YSO:Ce) scintillator. Wavelength-shifted radioluminescence emission and rise time analysis are also discussed.
- Research Organization:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation
- Grant/Contract Number:
- AC52-06NA25396
- OSTI ID:
- 1338779
- Report Number(s):
- LA-UR-16-24167; TRN: US1701245
- Journal Information:
- IEEE Transactions on Nuclear Science, Conference: Symposium on Radiation Measurements and Applications, Berkeley, CA (United States), 23-26, May 2016; ISSN 0018-9499
- Publisher:
- Institute of Electrical and Electronics Engineers (IEEE)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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