skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: In-plane optical anisotropy of layered gallium telluride

Abstract

Layered gallium telluride (GaTe) has attracted much attention recently, due to its extremely high photoresponsivity, short response time, and promising thermoelectric performance. Different from most commonly studied two-dimensional (2D) materials, GaTe has in-plane anisotropy and a low symmetry with the C 2h 3 space group. Investigating the in-plane optical anisotropy, including the electron–photon and electron–phonon interactions of GaTe is essential in realizing its applications in optoelectronics and thermoelectrics. In this work, the anisotropic light-matter interactions in the low-symmetry material GaTe are studied using anisotropic optical extinction and Raman spectroscopies as probes. Our polarized optical extinction spectroscopy reveals the weak anisotropy in optical extinction spectra for visible light of multilayer GaTe. Polarized Raman spectroscopy proves to be sensitive to the crystalline orientation of GaTe, and shows the intricate dependences of Raman anisotropy on flake thickness, photon and phonon energies. Such intricate dependences can be explained by theoretical analyses employing first-principles calculations and group theory. Furthermore, these studies are a crucial step toward the applications of GaTe especially in optoelectronics and thermoelectrics, and provide a general methodology for the study of the anisotropy of light-matter interactions in 2D layered materials with in-plane anisotropy.

Authors:
 [1];  [2];  [1];  [3];  [1];  [1];  [4];  [4];  [1];  [1];  [5];  [2];  [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  2. Tohoku Univ., Sendai (Japan)
  3. Liaoning Shihua Univ., Fushun (China)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  5. Chinese Academy of Sciences, Shenyang (China); Tohoku Univ., Sendai (Japan)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1338530
Grant/Contract Number:
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 10; Journal Issue: 9; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; electron−photon interaction; group theory; light-matter interaction; optical transition selection rules; polarization-dependent optical extinction; polarization-dependent Raman spectroscopy

Citation Formats

Huang, Shengxi, Tatsumi, Yuki, Ling, Xi, Guo, Huaihong, Wang, Ziqiang, Watson, Garrett, Puretzky, Alexander A., Geohegan, David B., Kong, Jing, Li, Ju, Yang, Teng, Saito, Riichiro, and Dresselhaus, Mildred S.. In-plane optical anisotropy of layered gallium telluride. United States: N. p., 2016. Web. doi:10.1021/acsnano.6b05002.
Huang, Shengxi, Tatsumi, Yuki, Ling, Xi, Guo, Huaihong, Wang, Ziqiang, Watson, Garrett, Puretzky, Alexander A., Geohegan, David B., Kong, Jing, Li, Ju, Yang, Teng, Saito, Riichiro, & Dresselhaus, Mildred S.. In-plane optical anisotropy of layered gallium telluride. United States. doi:10.1021/acsnano.6b05002.
Huang, Shengxi, Tatsumi, Yuki, Ling, Xi, Guo, Huaihong, Wang, Ziqiang, Watson, Garrett, Puretzky, Alexander A., Geohegan, David B., Kong, Jing, Li, Ju, Yang, Teng, Saito, Riichiro, and Dresselhaus, Mildred S.. 2016. "In-plane optical anisotropy of layered gallium telluride". United States. doi:10.1021/acsnano.6b05002. https://www.osti.gov/servlets/purl/1338530.
@article{osti_1338530,
title = {In-plane optical anisotropy of layered gallium telluride},
author = {Huang, Shengxi and Tatsumi, Yuki and Ling, Xi and Guo, Huaihong and Wang, Ziqiang and Watson, Garrett and Puretzky, Alexander A. and Geohegan, David B. and Kong, Jing and Li, Ju and Yang, Teng and Saito, Riichiro and Dresselhaus, Mildred S.},
abstractNote = {Layered gallium telluride (GaTe) has attracted much attention recently, due to its extremely high photoresponsivity, short response time, and promising thermoelectric performance. Different from most commonly studied two-dimensional (2D) materials, GaTe has in-plane anisotropy and a low symmetry with the C2h3 space group. Investigating the in-plane optical anisotropy, including the electron–photon and electron–phonon interactions of GaTe is essential in realizing its applications in optoelectronics and thermoelectrics. In this work, the anisotropic light-matter interactions in the low-symmetry material GaTe are studied using anisotropic optical extinction and Raman spectroscopies as probes. Our polarized optical extinction spectroscopy reveals the weak anisotropy in optical extinction spectra for visible light of multilayer GaTe. Polarized Raman spectroscopy proves to be sensitive to the crystalline orientation of GaTe, and shows the intricate dependences of Raman anisotropy on flake thickness, photon and phonon energies. Such intricate dependences can be explained by theoretical analyses employing first-principles calculations and group theory. Furthermore, these studies are a crucial step toward the applications of GaTe especially in optoelectronics and thermoelectrics, and provide a general methodology for the study of the anisotropy of light-matter interactions in 2D layered materials with in-plane anisotropy.},
doi = {10.1021/acsnano.6b05002},
journal = {ACS Nano},
number = 9,
volume = 10,
place = {United States},
year = 2016,
month = 8
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 4works
Citation information provided by
Web of Science

Save / Share:
  • We use ac susceptibility to study the vortex pinning force anisotropy and the magnetic lock-in effect in the organic superconductor (TMTSF){sub 2}ClO{sub 4}, which is believed to have an in-plane anisotropy of {gamma}{sub {ital b}{ital a}}{similar_to}10 and a maximum out-of-plane anisotropy {gamma}{sub {ital c}{ital a}}{similar_to}100. Our measurements show only weak effects of the in-plane anisotropy. The pinning force for Josephson vortices (parallel to the conducting planes) is nearly independent of their orientation, except for a small but narrow peak (full width at half maximum {congruent}6{degree}) when the vortices are parallel to the TMTSF stacks ({ital a} axis). The pinning forcemore » initially {ital decreases} {ital as} {ital the} {ital vortices} {ital unlock} {ital from} {ital the} {ital layers}, contrary to the behavior previously observed in the organic superconductor (BEDT-TTF){sub 2}Cu(SCN){sub 2}. The lock-in threshold field is only weakly dependent on the initial angle of the Josephson vortices in the {ital ab} plane.« less
  • FeCoB layers prepared on Ru underlayer possess a high saturation magnetization M{sub s} and a high in-plane magnetic anisotropy filed H{sub k}. Effects of preparation conditions were investigated. Low Ar gas pressure condition and thicker film thickness were effective to attain distortion of FeCo crystallite. As the crystallinity of Ru underlayer became higher, higher H{sub k} was induced. The accumulation of anisotropic stress in the film caused by the oblique incidences of depositing atoms with high energy seems to be one of the important effects to attain high anisotropy field. It was succeeded to prepare the Ru/FeCoB film with highmore » H{sub k} of 500 Oe.« less
  • S>Waves which are not appreciably affected by the ionosphere are treated as to the effects of atmospheric inhomogeneities. Reflection at plane layers is studied, and a wave-optical treatment according to the Epstein method is given. (TR.H.)
  • Optical-phonon spectra were investigated for single crystals of the parent materials of various cuprate superconductors and related materials. Comparing the spectra, all the observed phonons were unambiguously assigned. It was found that the main phonon modes in the CuO{sub 2} plane, the Cu-O stretching and bending modes, exhibit completely different dependences of their frequency on the Cu-O bond distance {ital a}/2; that is, the former shows strong {ital a} dependence while the latter is relatively insensitive to {ital a}. From a quantitative analysis of the spectra, the highly covalent character of these layered cuprates was confirmed. The remarkable change ofmore » the stretching-mode frequency against {ital a} indicates a direct coupling of this phonon with the Cu-O charge-transfer electronic excitation.« less