Transient GaAs plasmonic metasurfaces at terahertz frequencies

Yang, Yuanmu; Kamaraju, N.; Campione, Salvatore; Liu, Sheng; Reno, John L.; Sinclair, Michael B.; Prasankumar, Rohit P.; Brener, Igal

doi:10.1021/acsphotonics.6b00735

Title: Transient GaAs plasmonic metasurfaces at terahertz frequencies

Journal Article · Fri Dec 09 00:00:00 EST 2016 · ACS Photonics

DOI:https://doi.org/10.1021/acsphotonics.6b00735· OSTI ID:1338393

^[1]; Kamaraju, N. ^[2];

^[1]; Liu, Sheng ^[1]; Reno, John L. ^[1]; Sinclair, Michael B. ^[1]; Prasankumar, Rohit P. ^[3]; Brener, Igal ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Indian Institute of Science Education and Research, Mohanpur (India)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Here we demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron–phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to more complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. In conclusion, the platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1338393

Report Number(s):: SAND-2016-12650J; 649940

Journal Information:: ACS Photonics, Vol. 4, Issue 1; ISSN 2330-4022

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 31 works

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