skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Silicon nanowire device and method for its manufacture

Abstract

There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation.

Inventors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1338051
Patent Number(s):
9,536,947
Application Number:
13/966,553
Assignee:
Sandia Corporation (Albuquerque, NM SNL-A
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Aug 14
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Okandan, Murat, Draper, Bruce L., and Resnick, Paul J.. Silicon nanowire device and method for its manufacture. United States: N. p., 2017. Web.
Okandan, Murat, Draper, Bruce L., & Resnick, Paul J.. Silicon nanowire device and method for its manufacture. United States.
Okandan, Murat, Draper, Bruce L., and Resnick, Paul J.. Tue . "Silicon nanowire device and method for its manufacture". United States. doi:. https://www.osti.gov/servlets/purl/1338051.
@article{osti_1338051,
title = {Silicon nanowire device and method for its manufacture},
author = {Okandan, Murat and Draper, Bruce L. and Resnick, Paul J.},
abstractNote = {There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 03 00:00:00 EST 2017},
month = {Tue Jan 03 00:00:00 EST 2017}
}

Patent:

Save / Share:
  • There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation. The method, in examples, includes thinning the nanowire through iterative oxidation and etching of the oxidized portion.
  • A photovoltaic cell having a light-directing optical element integrally formed in an encapsulant layer thereof. The optical element redirects light to increase the internal absorption of light incident on the photovoltaic device.
  • This patent describes a photovoltaic cell having decreased shading. It comprises a layer of bottom electrode material; a photovoltaic body disposed upon the layer of bottom electrode material; a layer of top electrode material disposed upon the photovoltaic body in a spaced apart relationship with the layer of bottom electrode material so that the photovoltaic body is sandwiched therebetween; at least one electrically-conductive, current-collecting grid line associated in electrical communication with the top electrode; and a layer of transparent, electrically insulating synthetic organic polymeric material disposed directly upon the top electrode material and the at least one grid line somore » as to cover the top electrode and the at least one gridline, the encapsulating layer having a groove formed integrally therein generally coextensive with the length of the current-collecting gridline, the groove operative to diffract incident light away from the underlying grid line so that the light illuminates adjacent portions of the photovoltaic cell, whereby shading effects caused by the grid line are minimized.« less
  • A photovoltaic cell is described having decreased shading, the cell comprising: a layer of bottom electrode material; a photovoltaic body disposed upon the layer of bottom electrode material; a layer of top electrode material disposed upon the photovoltaic body in a spaced apart relationship with the layer of bottom electrode material so that the photovoltaic body is sandwiched there between; and a layer of transparent, electrically insulating synthetic organic polymeric encapsulating material disposed directly upon the top electrode material so as to substantially cover the top electrode, the encapsulating layer having a pattern of grooves formed integrally therein, the patternmore » covering substantially all of the active area of the cell and operative to direct light incident thereon so that an increased amount of the light is absorbed within the photovoltaic cell as compared to photovoltaic cells without the encapsulating layer.« less
  • The specification discloses a silicon nitride-based material and method of its manufacture wherein the material includes silicon nitride particles coated with yttrium aluminate. The material in a sintered form exhibits an increased melting point of at least about 1800{degrees}C in the grain boundaries as compared to prior silicon nitride-based sintered articles which achieved a grain boundary melting point of only about 1500{degrees}C. Sintered articles made from the material also exhibit improved fracture toughness, hardness and density for use in high-temperature applications. 2 tabs.