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Title: Silicon nanowire device and method for its manufacture

Abstract

There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation.

Inventors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1338051
Patent Number(s):
9,536,947
Application Number:
13/966,553
Assignee:
Sandia Corporation (Albuquerque, NM SNL-A
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Aug 14
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Okandan, Murat, Draper, Bruce L., and Resnick, Paul J.. Silicon nanowire device and method for its manufacture. United States: N. p., 2017. Web.
Okandan, Murat, Draper, Bruce L., & Resnick, Paul J.. Silicon nanowire device and method for its manufacture. United States.
Okandan, Murat, Draper, Bruce L., and Resnick, Paul J.. Tue . "Silicon nanowire device and method for its manufacture". United States. doi:. https://www.osti.gov/servlets/purl/1338051.
@article{osti_1338051,
title = {Silicon nanowire device and method for its manufacture},
author = {Okandan, Murat and Draper, Bruce L. and Resnick, Paul J.},
abstractNote = {There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 03 00:00:00 EST 2017},
month = {Tue Jan 03 00:00:00 EST 2017}
}

Patent:

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