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Title: A review of molecular beam epitaxy of ferroelectric BaTiO 3 films on Si, Ge and GaAs substrates and their applications

Abstract

SrTiO 3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO 3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Lastly, we review the last developments in two areas of interest for the applications of BaTiO 3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO 3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.

Authors:
 [1];  [2];  [2];  [3];  [1]
  1. Univ. de Lyon, Ecully (France)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Univ. de Toulouse, Toulouse (France)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE
OSTI Identifier:
1337832
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Science and Technology of Advanced Materials
Additional Journal Information:
Journal Volume: 16; Journal Issue: 3; Journal ID: ISSN 1468-6996
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; molecular beam epitaxy; ferroelectric; semiconductor

Citation Formats

Mazet, Lucie, Yang, Sang Mo, Kalinin, Sergei V., Schamm-Chardon, Sylvie, and Dubourdieu, Catherine. A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications. United States: N. p., 2015. Web. doi:10.1088/1468-6996/16/3/036005.
Mazet, Lucie, Yang, Sang Mo, Kalinin, Sergei V., Schamm-Chardon, Sylvie, & Dubourdieu, Catherine. A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications. United States. doi:10.1088/1468-6996/16/3/036005.
Mazet, Lucie, Yang, Sang Mo, Kalinin, Sergei V., Schamm-Chardon, Sylvie, and Dubourdieu, Catherine. Tue . "A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications". United States. doi:10.1088/1468-6996/16/3/036005. https://www.osti.gov/servlets/purl/1337832.
@article{osti_1337832,
title = {A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications},
author = {Mazet, Lucie and Yang, Sang Mo and Kalinin, Sergei V. and Schamm-Chardon, Sylvie and Dubourdieu, Catherine},
abstractNote = {SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Lastly, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.},
doi = {10.1088/1468-6996/16/3/036005},
journal = {Science and Technology of Advanced Materials},
number = 3,
volume = 16,
place = {United States},
year = {Tue Jun 30 00:00:00 EDT 2015},
month = {Tue Jun 30 00:00:00 EDT 2015}
}

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Cited by: 10 works
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Works referenced in this record:

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