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Title: Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes

Abstract

Here, the internal quantum efficiencies (IQE) and carrier lifetimes of semipolar ($$20\bar{2}$$$\bar{1}$$) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12-nm-thick single quantum well (SQW), two 6-nm-thick QWs, and three 4-nm-thick QWs. The IQE is highest for the 12-nm-thick SQW and decreases as the well width decreases. The radiative lifetimes are similar for all structures, while the nonradiative lifetimes decrease as the well width decreases. The superior IQE and longer nonradiative lifetime of the SQW structure suggests using thick SQW active regions for high brightness semipolar ($$20\bar{2}$$$\bar{1}$$) LEDs.

Authors:
 [1];  [1];  [1];  [2];  [2];  [3];  [3];  [1]
  1. Univ. of New Mexico, Albuquerque, NM (United States)
  2. Univ. of California, Santa Barbara, CA (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Univ. of New Mexico, Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
Contributing Org.:
Sandia National Laboratories, Solid State Lighting and Energy Electronics Center (SSLEEC), University of New Mexico
OSTI Identifier:
1337779
Grant/Contract Number:
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 25; Journal Issue: 3; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America (OSA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; light emitting diodes; spectroscopy; time-resolved; photoluminescence; Quantum-well, -wire and -dot devices

Citation Formats

Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin K., Oh, Sang H., DenBaars, Steve P., Liu, Sheng, Brener, Igal, and Feezell, Daniel F. Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes. United States: N. p., 2017. Web. doi:10.1364/OE.25.002178.
Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin K., Oh, Sang H., DenBaars, Steve P., Liu, Sheng, Brener, Igal, & Feezell, Daniel F. Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes. United States. doi:10.1364/OE.25.002178.
Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin K., Oh, Sang H., DenBaars, Steve P., Liu, Sheng, Brener, Igal, and Feezell, Daniel F. Thu . "Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes". United States. doi:10.1364/OE.25.002178. https://www.osti.gov/servlets/purl/1337779.
@article{osti_1337779,
title = {Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes},
author = {Okur, Serdal and Nami, Mohsen and Rishinaramangalam, Ashwin K. and Oh, Sang H. and DenBaars, Steve P. and Liu, Sheng and Brener, Igal and Feezell, Daniel F.},
abstractNote = {Here, the internal quantum efficiencies (IQE) and carrier lifetimes of semipolar ($20\bar{2}$$\bar{1}$) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12-nm-thick single quantum well (SQW), two 6-nm-thick QWs, and three 4-nm-thick QWs. The IQE is highest for the 12-nm-thick SQW and decreases as the well width decreases. The radiative lifetimes are similar for all structures, while the nonradiative lifetimes decrease as the well width decreases. The superior IQE and longer nonradiative lifetime of the SQW structure suggests using thick SQW active regions for high brightness semipolar ($20\bar{2}$$\bar{1}$) LEDs.},
doi = {10.1364/OE.25.002178},
journal = {Optics Express},
number = 3,
volume = 25,
place = {United States},
year = {Thu Jan 26 00:00:00 EST 2017},
month = {Thu Jan 26 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 6works
Citation information provided by
Web of Science

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  • The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (112{sup ¯}2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarizationmore » induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.« less
  • We study the low efficiency droop characteristics of semipolar InGaN light-emitting diodes (LEDs) using modified rate equation incoporating the phase-space filling (PSF) effect where the results on c-plane LEDs are also obtained and compared. Internal quantum efficiency (IQE) of LEDs was simulated using a modified ABC model with different PSF filling (n{sub 0}), Shockley-Read-Hall (A), radiative (B), Auger (C) coefficients and different active layer thickness (d), where the PSF effect showed a strong impact on the simulated LED efficiency results. A weaker PSF effect was found for low-droop semipolar LEDs possibly due to small quantum confined Stark effect, short carriermore » lifetime, and small average carrier density. A very good agreement between experimental data and the theoretical modeling was obtained for low-droop semipolar LEDs with weak PSF effect. These results suggest the low droop performance may be explained by different mechanisms for semipolar LEDs.« less
  • In this paper, influence of a V-pit embedded inside the multiple quantum wells (MQWs) LED was studied. A fully three-dimensional stress-strain solver and Poisson-drift-diffusion solver are employed to study the current path, where the quantum efficiency and turn-on voltage will be discussed. Our results show that the hole current is not only from top into lateral quantum wells (QWs) but flowing through shallow sidewall QWs and then injecting into the deeper lateral QWs in V-pit structures, where the V-pit geometry provides more percolation length for holes to make the distribution uniform along lateral MQWs. The IQE behavior with different V-pitmore » sizes, threading dislocation densities, and current densities were analyzed. Substantially, the variation of the quantum efficiency for different V-pit sizes is due to the trap-assisted nonradiative recombination, effective QW ratio, and ability of hole injections.« less
  • The experimental current-voltage characteristics and dependences of the external quantum yield on the current density of light-emitting diodes based on InGaN/GaN multiple quantum wells for the wide temperature range T = 10-400 K are presented. It is shown that, at low-temperatures T < 100 K, the injection of holes into the quantum wells occurs from localized acceptor states. The low-temperature injection of electrons into p-GaN occurs due to quasi-ballistic transport in the region of multiple quantum wells. An increase in temperature leads to an increase in the current which is governed by thermally activated hole and electron injection from themore » allowed bands of GaN.« less