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Title: TUNING THE SIGN AND SENSITIVITY OF FE/GAAS ELECTRICAL SPIN DETECTORS

Authors:
 [1]
  1. Los Alamos National Laboratory
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1337069
Report Number(s):
LA-UR-07-2910
DOE Contract Number:
AC52-06NA25396
Resource Type:
Conference
Resource Relation:
Conference: SPINTECH IV: FOURTH INTERNATIONAL SCHOOL & CONFERENCE ON SPINTRONICS AND QUANTUM INFORMATION TECHNOLOGY ; 200706 ; MAUI
Country of Publication:
United States
Language:
English

Citation Formats

CROOKER, SCOTT A. TUNING THE SIGN AND SENSITIVITY OF FE/GAAS ELECTRICAL SPIN DETECTORS. United States: N. p., 2007. Web.
CROOKER, SCOTT A. TUNING THE SIGN AND SENSITIVITY OF FE/GAAS ELECTRICAL SPIN DETECTORS. United States.
CROOKER, SCOTT A. Mon . "TUNING THE SIGN AND SENSITIVITY OF FE/GAAS ELECTRICAL SPIN DETECTORS". United States. doi:. https://www.osti.gov/servlets/purl/1337069.
@article{osti_1337069,
title = {TUNING THE SIGN AND SENSITIVITY OF FE/GAAS ELECTRICAL SPIN DETECTORS},
author = {CROOKER, SCOTT A.},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Apr 30 00:00:00 EDT 2007},
month = {Mon Apr 30 00:00:00 EDT 2007}
}

Conference:
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  • We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3 mV at 10 K and 0.8 mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 μm,more » respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.« less
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