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Title: Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films

Abstract

Polar discontinuity at interfaces plays deterministic roles in charge transport, magnetism, and even superconductivity of functional oxides. To date, most polar discontinuity problems have been explored in hetero-interfaces between two dissimilar materials. Here, we show that charged domain walls (CDWs) in epitaxial thin films of ferroelectric PbZr 0.2Ti 0.8O 3 are strongly coupled to polar interfaces through the formation of ½<101>{h0l} type crystallographic shear planes (CSPs). Using atomic resolution imaging and spectroscopy we illustrate that the CSPs consist of both conservative and nonconservative segments when coupled to the CDWs, where necessary compensating charges for stabilizing the CDWs are associated with vacancies at the CSPs. Lasly, the CDW/CSP coupling yields an atomically narrow domain walls, consisting of a single atomic layer of oxygen. This study shows that the CDW/CSP coupling is a fascinating venue to develop emergent material properties.

Authors:
 [1];  [2];  [3];  [4];  [5];  [1];  [4];  [4];  [3];  [6];  [5];  [5];  [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
  2. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.; Stony Brook Univ., NY (United States). Dept. of Materials Science & Engineering
  3. McMaster Univ., Hamilton, ON (Canada). Dept. of Materials Science and Engineering
  4. Stony Brook Univ., NY (United States). Dept. of Physics and Astronomy
  5. Yale Univ., New Haven, CT (United States). Center for Research on Interface Structures and Phenomena, Dept. of Applied Physics; Yale Univ., New Haven, CT (United States). Dept. of Mechanical Engineering and Materials Science
  6. Rutgers Univ., Piscataway, NJ (United States). Rutgers Center for Emergent Materials, Dept. of Physics and Astronomy
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF); Gordon and Betty Moore Foundation
OSTI Identifier:
1336196
Alternate Identifier(s):
OSTI ID: 1315857
Report Number(s):
BNL-113190-2016-JA
Journal ID: ISSN 2469-9950; PRBMDO; R&D Project: MA015MACA; KC0201010
Grant/Contract Number:  
SC0012704; DMR119826; DMR1309868; DMR1334867; GBMF4413; DESC0012704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 94; Journal Issue: 10; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Han, Myung-Geun, Garlow, Joseph A., Bugnet, Matthieu, Divilov, Simon, Marshall, Matthew S. J., Wu, Lijun, Dawber, Matthew, Fernandez-Serra, Marivi, Botton, Gianluigi A., Cheong, Sang-Wook, Walker, Frederick J., Ahn, Charles H., and Zhu, Yimei. Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.94.100101.
Han, Myung-Geun, Garlow, Joseph A., Bugnet, Matthieu, Divilov, Simon, Marshall, Matthew S. J., Wu, Lijun, Dawber, Matthew, Fernandez-Serra, Marivi, Botton, Gianluigi A., Cheong, Sang-Wook, Walker, Frederick J., Ahn, Charles H., & Zhu, Yimei. Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films. United States. doi:10.1103/PhysRevB.94.100101.
Han, Myung-Geun, Garlow, Joseph A., Bugnet, Matthieu, Divilov, Simon, Marshall, Matthew S. J., Wu, Lijun, Dawber, Matthew, Fernandez-Serra, Marivi, Botton, Gianluigi A., Cheong, Sang-Wook, Walker, Frederick J., Ahn, Charles H., and Zhu, Yimei. Fri . "Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films". United States. doi:10.1103/PhysRevB.94.100101. https://www.osti.gov/servlets/purl/1336196.
@article{osti_1336196,
title = {Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films},
author = {Han, Myung-Geun and Garlow, Joseph A. and Bugnet, Matthieu and Divilov, Simon and Marshall, Matthew S. J. and Wu, Lijun and Dawber, Matthew and Fernandez-Serra, Marivi and Botton, Gianluigi A. and Cheong, Sang-Wook and Walker, Frederick J. and Ahn, Charles H. and Zhu, Yimei},
abstractNote = {Polar discontinuity at interfaces plays deterministic roles in charge transport, magnetism, and even superconductivity of functional oxides. To date, most polar discontinuity problems have been explored in hetero-interfaces between two dissimilar materials. Here, we show that charged domain walls (CDWs) in epitaxial thin films of ferroelectric PbZr0.2Ti0.8O3 are strongly coupled to polar interfaces through the formation of ½<101>{h0l} type crystallographic shear planes (CSPs). Using atomic resolution imaging and spectroscopy we illustrate that the CSPs consist of both conservative and nonconservative segments when coupled to the CDWs, where necessary compensating charges for stabilizing the CDWs are associated with vacancies at the CSPs. Lasly, the CDW/CSP coupling yields an atomically narrow domain walls, consisting of a single atomic layer of oxygen. This study shows that the CDW/CSP coupling is a fascinating venue to develop emergent material properties.},
doi = {10.1103/PhysRevB.94.100101},
journal = {Physical Review B},
number = 10,
volume = 94,
place = {United States},
year = {Fri Sep 02 00:00:00 EDT 2016},
month = {Fri Sep 02 00:00:00 EDT 2016}
}

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