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Title: CdZnTe Position-sensitive Drift Detectors for Spectroscopy and Imaging of Gamma-ray Sources

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
OSTI Identifier:
1336043
Report Number(s):
BNL-112255-2016-CP
DOE Contract Number:
SC00112704
Resource Type:
Conference
Resource Relation:
Conference: INMM 57th Annual Meeting; Atlanta Marriott Marquis, Atlanta, GA; 20160724 through 20160728
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS

Citation Formats

Bolotnikov A., Brands, H., Camarda, G.S., Cui, Y., Gul, R., De Geronimo, G., Fried, J., Hossain, A., Hoy, L., Indusi, J., Liang, F., Preston, J., Vernon, E., Yang, G., and James, R.B.. CdZnTe Position-sensitive Drift Detectors for Spectroscopy and Imaging of Gamma-ray Sources. United States: N. p., 2016. Web.
Bolotnikov A., Brands, H., Camarda, G.S., Cui, Y., Gul, R., De Geronimo, G., Fried, J., Hossain, A., Hoy, L., Indusi, J., Liang, F., Preston, J., Vernon, E., Yang, G., & James, R.B.. CdZnTe Position-sensitive Drift Detectors for Spectroscopy and Imaging of Gamma-ray Sources. United States.
Bolotnikov A., Brands, H., Camarda, G.S., Cui, Y., Gul, R., De Geronimo, G., Fried, J., Hossain, A., Hoy, L., Indusi, J., Liang, F., Preston, J., Vernon, E., Yang, G., and James, R.B.. 2016. "CdZnTe Position-sensitive Drift Detectors for Spectroscopy and Imaging of Gamma-ray Sources". United States. doi:. https://www.osti.gov/servlets/purl/1336043.
@article{osti_1336043,
title = {CdZnTe Position-sensitive Drift Detectors for Spectroscopy and Imaging of Gamma-ray Sources},
author = {Bolotnikov A. and Brands, H. and Camarda, G.S. and Cui, Y. and Gul, R. and De Geronimo, G. and Fried, J. and Hossain, A. and Hoy, L. and Indusi, J. and Liang, F. and Preston, J. and Vernon, E. and Yang, G. and James, R.B.},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 7
}

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  • No abstract prepared.
  • The spatial spread due to Compton scatter in Ge was measured to study the reduction in image contrast and signal-to-noise ratio (S/N) resulting from erroneous readout in Ge position-sensitive detectors. The step response revealing this spread was obtained by scanning with a 122 keV ..gamma..-ray beam across a boundary of two sectors of a slotted coaxial Ge(Li) detector that is 40 mm diameter by 22 mm long. The derived line-spread function at 140 keV (/sup 99m/Tc) exhibits much shorter but thicker tails than those due to scatter in tissue as observed with a NaI detector through 5.5 cm of scatteringmore » material. Convolutions of rectangular profiles of voids with the Ge(Li) line-spread function show marked deterioration in contrast for voids less than 10 mm across, which in turn results in even greater deterioration of the S/N. As a result, the contrast for voids in Ge images is only 20 to 30 percent higher than that in NaI and the S/N is only comparable for equal detector areas. The degradation in image contrast due to scatter in Ge detectors can be greatly reduced by either using thin detectors (approximately 5 mm), where scatter virtually does not exist, or by using thicker detectors and rejecting scatter electronically. To reduce the effects of scatter on the S/N as well as on contrast, the erroneous position readouts must actually be corrected. A more realizable approach to achieving the ultimate potential of Ge detectors may be a scanning array of discrete detectors (not position sensitive) in which readout is not affected by scatter.« less
  • This article describes novel techniques to directly measure the electron mobility and mean free drift time product {mu}{sub e}{tau}{sub e} in semiconductor detectors. These methods are based on newly developed single polarity charge sensing and depth sensing techniques. Compared with conventional methods based on the Hecht relation, the new methods do not involve curve fitting, are less sensitive to the variation of pulse rise times, and allow the use of higher energy {gamma} rays typical of many applications. {copyright} {ital 1998 American Institute of Physics.}