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Title: Nitrogen and silicon defect incorporation during homoepitaxial CVD diamond growth on (111) surfaces

Abstract

Chemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. As a result, altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defectmore » incorporation into the (111)-oriented diamond lattice and these findings are presented.« less

Authors:
 [1];  [1]
  1. Univ. of Alabama at Birmingham, Birmingham, AL (United States)
Publication Date:
Research Org.:
Carnegie Institution of Washington, Washington, D.C. (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1335151
Grant/Contract Number:  
NA0002006
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
MRS Proceedings
Additional Journal Information:
Journal Volume: 1734; Journal ID: ISSN 1946-4274
Publisher:
Materials Research Society (MRS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Moore, Samuel L., and Vohra, Yogesh K.. Nitrogen and silicon defect incorporation during homoepitaxial CVD diamond growth on (111) surfaces. United States: N. p., 2015. Web. doi:10.1557/opl.2015.304.
Moore, Samuel L., & Vohra, Yogesh K.. Nitrogen and silicon defect incorporation during homoepitaxial CVD diamond growth on (111) surfaces. United States. doi:10.1557/opl.2015.304.
Moore, Samuel L., and Vohra, Yogesh K.. Thu . "Nitrogen and silicon defect incorporation during homoepitaxial CVD diamond growth on (111) surfaces". United States. doi:10.1557/opl.2015.304. https://www.osti.gov/servlets/purl/1335151.
@article{osti_1335151,
title = {Nitrogen and silicon defect incorporation during homoepitaxial CVD diamond growth on (111) surfaces},
author = {Moore, Samuel L. and Vohra, Yogesh K.},
abstractNote = {Chemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. As a result, altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defect incorporation into the (111)-oriented diamond lattice and these findings are presented.},
doi = {10.1557/opl.2015.304},
journal = {MRS Proceedings},
number = ,
volume = 1734,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 2015},
month = {Thu Jan 01 00:00:00 EST 2015}
}

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