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Title: Metastable tantalum oxide formation during the devitrification of amorphous tantalum thin films

Abstract

Microstructural evolution during the devitrification of amorphous tantalum thin films synthesized via pulsed laser deposition was investigated using in situ transmission electron microscopy (TEM) combined with ex situ isothermal annealing, bright-field imaging, and electron-diffraction analysis. The phases formed during crystallization and their stability were characterized as a function of the chamber pressure during deposition, devitrification temperature, and annealing time. A range of metastable nanocrystalline tantalum oxides were identified following devitrification including multiple orthorhombic oxide phases, which often were present with, or evolved to, the tetragonal TaO 2 phase. While the appearance of these phases indicated the films were evolving to the stable form of tantalum oxide—monoclinic tantalum pentoxide—it was likely not achieved for the conditions considered due to an insufficient amount of oxygen present in the films following deposition. Nevertheless, the collective in situ and ex situ TEM analysis applied to thin film samples enabled the isolation of a number of metastable tantalum oxides. As a result, new insights were gained into the transformation sequence and stability of these nanocrystalline phases, which presents opportunities for the development of advanced tantalum oxide-based dielectric materials for novel memristor designs.

Authors:
 [1];  [2];  [1]
  1. Stony Brook Univ., Stony Brook, NY (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1335131
Report Number(s):
SAND-2016-5978J
Journal ID: ISSN 0002-7820; 642489
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of the American Ceramic Society
Additional Journal Information:
Journal Volume: 99; Journal Issue: 11; Journal ID: ISSN 0002-7820
Publisher:
American Ceramic Society
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; dielectric materials/properties; nanomaterials; phase transformations; tantalum/tantalum compounds; thin films

Citation Formats

Donaldson, Olivia K., Hattar, Khalid, and Trelewicz, Jason R. Metastable tantalum oxide formation during the devitrification of amorphous tantalum thin films. United States: N. p., 2016. Web. doi:10.1111/jace.14384.
Donaldson, Olivia K., Hattar, Khalid, & Trelewicz, Jason R. Metastable tantalum oxide formation during the devitrification of amorphous tantalum thin films. United States. doi:10.1111/jace.14384.
Donaldson, Olivia K., Hattar, Khalid, and Trelewicz, Jason R. Mon . "Metastable tantalum oxide formation during the devitrification of amorphous tantalum thin films". United States. doi:10.1111/jace.14384. https://www.osti.gov/servlets/purl/1335131.
@article{osti_1335131,
title = {Metastable tantalum oxide formation during the devitrification of amorphous tantalum thin films},
author = {Donaldson, Olivia K. and Hattar, Khalid and Trelewicz, Jason R.},
abstractNote = {Microstructural evolution during the devitrification of amorphous tantalum thin films synthesized via pulsed laser deposition was investigated using in situ transmission electron microscopy (TEM) combined with ex situ isothermal annealing, bright-field imaging, and electron-diffraction analysis. The phases formed during crystallization and their stability were characterized as a function of the chamber pressure during deposition, devitrification temperature, and annealing time. A range of metastable nanocrystalline tantalum oxides were identified following devitrification including multiple orthorhombic oxide phases, which often were present with, or evolved to, the tetragonal TaO2 phase. While the appearance of these phases indicated the films were evolving to the stable form of tantalum oxide—monoclinic tantalum pentoxide—it was likely not achieved for the conditions considered due to an insufficient amount of oxygen present in the films following deposition. Nevertheless, the collective in situ and ex situ TEM analysis applied to thin film samples enabled the isolation of a number of metastable tantalum oxides. As a result, new insights were gained into the transformation sequence and stability of these nanocrystalline phases, which presents opportunities for the development of advanced tantalum oxide-based dielectric materials for novel memristor designs.},
doi = {10.1111/jace.14384},
journal = {Journal of the American Ceramic Society},
number = 11,
volume = 99,
place = {United States},
year = {Mon Jul 04 00:00:00 EDT 2016},
month = {Mon Jul 04 00:00:00 EDT 2016}
}

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Works referenced in this record:

Synthesis of Novel Thin-Film Materials by Pulsed Laser Deposition
journal, August 1996