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Title: Real-Time Examination of Atomistic Mechanisms during Shock-Induced Structural Transformation in Silicon

Abstract

Experimental determination of atomistic mechanisms linking crystal structures during a compression driven solid-solid phase transformation is a long standing and challenging scientific objective. Also, when using new capabilities at the Dynamic Compression Sector at the Advanced Photon Source, the structure of shocked Si at 19 GPa was identified as simple hexagonal and the lattice orientations between ambient cubic diamond and simple hexagonal structures were related. Furthermore, this approach is general and provides a powerful new method for examining atomistic mechanisms during stress-induced structural changes.

Authors:
 [1];  [1];  [1]
  1. Washington State Univ., Pullman, WA (United States). Inst. for Shock Physics
Publication Date:
Research Org.:
Washington State Univ., Pullman, WA (United States). Inst. for Shock Physics
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)
OSTI Identifier:
1334536
Alternate Identifier(s):
OSTI ID: 1266410
Grant/Contract Number:  
NA0002007; NA0002442; AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 117; Journal Issue: 4; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; 36 MATERIALS SCIENCE

Citation Formats

Turneaure, Stefan J., Sinclair, N., and Gupta, Y. M. Real-Time Examination of Atomistic Mechanisms during Shock-Induced Structural Transformation in Silicon. United States: N. p., 2016. Web. doi:10.1103/PhysRevLett.117.045502.
Turneaure, Stefan J., Sinclair, N., & Gupta, Y. M. Real-Time Examination of Atomistic Mechanisms during Shock-Induced Structural Transformation in Silicon. United States. doi:10.1103/PhysRevLett.117.045502.
Turneaure, Stefan J., Sinclair, N., and Gupta, Y. M. Wed . "Real-Time Examination of Atomistic Mechanisms during Shock-Induced Structural Transformation in Silicon". United States. doi:10.1103/PhysRevLett.117.045502. https://www.osti.gov/servlets/purl/1334536.
@article{osti_1334536,
title = {Real-Time Examination of Atomistic Mechanisms during Shock-Induced Structural Transformation in Silicon},
author = {Turneaure, Stefan J. and Sinclair, N. and Gupta, Y. M.},
abstractNote = {Experimental determination of atomistic mechanisms linking crystal structures during a compression driven solid-solid phase transformation is a long standing and challenging scientific objective. Also, when using new capabilities at the Dynamic Compression Sector at the Advanced Photon Source, the structure of shocked Si at 19 GPa was identified as simple hexagonal and the lattice orientations between ambient cubic diamond and simple hexagonal structures were related. Furthermore, this approach is general and provides a powerful new method for examining atomistic mechanisms during stress-induced structural changes.},
doi = {10.1103/PhysRevLett.117.045502},
journal = {Physical Review Letters},
number = 4,
volume = 117,
place = {United States},
year = {Wed Jul 20 00:00:00 EDT 2016},
month = {Wed Jul 20 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 1 work
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Works referenced in this record:

Two-dimensional detector software: From real detector to idealised image or two-theta scan
journal, January 1996

  • Hammersley, A. P.; Svensson, S. O.; Hanfland, M.
  • High Pressure Research, Vol. 14, Issue 4-6, p. 235-248
  • DOI: 10.1080/08957959608201408