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Title: Fourier transform infrared spectroscopy measurements of multi-phonon and free-carrier absorption in ZnO

Abstract

Fourier transform infrared (FTIR) measurements were carried out on thin films and bulk single crystals of ZnO over a wide temperature range to study the free-carrier and multi-phonon infrared absorptions and the effects of hydrogen incorporation on these properties. Aluminum-doped ZnO thin films were deposited on quartz substrates using atomic-layer deposition (ALD) and sol–gel methods. Hall-effect measurements showed that the ALD films have a resistivity of ρ = 1.11 × 10 –3 Ω cm, three orders of magnitude lower than sol–gel films (ρ = 1.25 Ω cm). This result is consistent with the significant difference in their free-carrier absorption as revealed by FTIR spectra obtained at room temperature. By reducing the temperature to 80 K, the free carriers were frozen out, and their absorption spectrum was suppressed. From the FTIR measurements on ZnO single crystals that were grown by the chemical vapor transport method, we identified a shoulder around 3350 cm –1 and associated it with the presence of two or more hydrogen ions in a Zn vacancy. After reducing the hydrogen level in the crystal, the measurements revealed the multi-phonon absorption of ZnO in the range of 700–1200 cm –1. Furthermore, this study shows that the multi-phonon absorption bandsmore » can be completely masked by the presence of a large concentration of hydrogen in the crystals.« less

Authors:
 [1];  [2];  [2];  [2];  [3]; ORCiD logo [1]
  1. Bowling Green State Univ., Bowling Green, OH (United States)
  2. Wright-Patterson Air Force Base, Dayton, OH (United States)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1334469
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Journal of Electronic Materials
Additional Journal Information:
Journal Volume: 45; Journal Issue: 12; Journal ID: ISSN 0361-5235
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; FTIR spectroscopy; ZnO; free-carrier absorption; multi-phonon absorption; hydrogen; vibrational modes

Citation Formats

Saadatkia, Pooneh, Ariyawansa, G., Leedy, K. D., Look, D. C., Boatner, L. A., and Selim, F. A. Fourier transform infrared spectroscopy measurements of multi-phonon and free-carrier absorption in ZnO. United States: N. p., 2016. Web. doi:10.1007/s11664-016-5023-2.
Saadatkia, Pooneh, Ariyawansa, G., Leedy, K. D., Look, D. C., Boatner, L. A., & Selim, F. A. Fourier transform infrared spectroscopy measurements of multi-phonon and free-carrier absorption in ZnO. United States. doi:10.1007/s11664-016-5023-2.
Saadatkia, Pooneh, Ariyawansa, G., Leedy, K. D., Look, D. C., Boatner, L. A., and Selim, F. A. Fri . "Fourier transform infrared spectroscopy measurements of multi-phonon and free-carrier absorption in ZnO". United States. doi:10.1007/s11664-016-5023-2.
@article{osti_1334469,
title = {Fourier transform infrared spectroscopy measurements of multi-phonon and free-carrier absorption in ZnO},
author = {Saadatkia, Pooneh and Ariyawansa, G. and Leedy, K. D. and Look, D. C. and Boatner, L. A. and Selim, F. A.},
abstractNote = {Fourier transform infrared (FTIR) measurements were carried out on thin films and bulk single crystals of ZnO over a wide temperature range to study the free-carrier and multi-phonon infrared absorptions and the effects of hydrogen incorporation on these properties. Aluminum-doped ZnO thin films were deposited on quartz substrates using atomic-layer deposition (ALD) and sol–gel methods. Hall-effect measurements showed that the ALD films have a resistivity of ρ = 1.11 × 10–3 Ω cm, three orders of magnitude lower than sol–gel films (ρ = 1.25 Ω cm). This result is consistent with the significant difference in their free-carrier absorption as revealed by FTIR spectra obtained at room temperature. By reducing the temperature to 80 K, the free carriers were frozen out, and their absorption spectrum was suppressed. From the FTIR measurements on ZnO single crystals that were grown by the chemical vapor transport method, we identified a shoulder around 3350 cm–1 and associated it with the presence of two or more hydrogen ions in a Zn vacancy. After reducing the hydrogen level in the crystal, the measurements revealed the multi-phonon absorption of ZnO in the range of 700–1200 cm–1. Furthermore, this study shows that the multi-phonon absorption bands can be completely masked by the presence of a large concentration of hydrogen in the crystals.},
doi = {10.1007/s11664-016-5023-2},
journal = {Journal of Electronic Materials},
issn = {0361-5235},
number = 12,
volume = 45,
place = {United States},
year = {2016},
month = {10}
}

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